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PSMN1R7-25YLC,115;中文规格书,Datasheet资料

1.Product profile

1.1General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

1.2Features and benefits

High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance

Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads

1.3Applications

DC-to-DC converters Lithium-ion battery protection Load switching

Power OR-ing Server power supplies Sync rectifier

1.4Quick reference data

PSMN1R7-25YLC

N-channel 25 V 1.9 m ? logic level MOSFET in LFPAK using NextPower technology

Rev. 01 — 2 May 2011

Product data sheet

Table 1.Quick reference data

Symbol Parameter

Conditions Min Typ Max Unit V DS drain-source voltage 25°C ≤T j ≤175°C --25V I D drain current

T mb =25°C;V GS =10V; see Figure 1

[1]

--100A P tot total power dissipation T mb =25°C;see Figure 2

--164W T j junction temperature -55

-175°C Static characteristics

R DSon

drain-source on-state resistance

V GS =4.5V; I D =25A; T j =25°C; see Figure 12-2

2.5

m ?V GS =10V; I D =25A; T j =25°C; see Figure 12

-

1.55 1.9

m ?

[1]

Continuous current is limited by package

2.Pinning information

3.Ordering information

4.Marking

[1]

% = placeholder for manufacturing site code

Dynamic characteristics Q GD gate-drain charge V GS =4.5V; I D =25A; V DS =12V;see Figure 14; see Figure 15

-7.8-nC Q G(tot)

total gate charge

-28

-nC

Table 1.

Quick reference data …continued

Symbol Parameter Conditions

Min Typ Max Unit Table 2.Pinning information Pin

Symbol Description Simplified outline Graphic symbol

1S source SOT669 (LFPAK; Power-SO8)

2S source 3S source 4G gate

mb

D

mounting base; connected to drain

mb

1234

Table 3.

Ordering information

Type number

Package Name

Description

Version PSMN1R7-25YLC

LFPAK; Power-SO8

plastic single-ended surface-mounted package; 4 leads

SOT669

Table 4.

Marking codes

Type number Marking code [1]PSMN1R7-25YLC

1C725L

5.Limiting values

[1]Continuous current is limited by package

Table 5.Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions Min Max Unit V DS drain-source voltage 25°C ≤T j ≤175°C

-25V V DGR drain-gate voltage 25°C ≤T j ≤175°C; R GS =20k ?

-25V V GS gate-source voltage -2020V I D drain current V GS =10V; T mb =25°C; see Figure 1[1]-100A V GS =10V; T mb =100°C; see Figure 1[1]

-100A I DM peak drain current pulsed; t p ≤10μs; T mb =25°C; see Figure 4

-894A P tot total power dissipation T mb =25°C; see Figure 2

-164W T stg storage temperature -55175°C T j junction temperature -55175°C T sld(M)peak soldering temperature -260°C V ESD electrostatic discharge voltage MM (JEDEC JESD22-A115)670-V Source-drain diode

I S source current T mb =25°C

-100A I SM peak source current pulsed; t p ≤10μs; T mb =25°C -894A Avalanche ruggedness

E DS(AL)S

non-repetitive drain-source avalanche energy

V GS =10V; T j(init)=25°C; I D =100A; V sup ≤25V; unclamped; R GS =50?; see Figure 3

-149

mJ

6.Thermal characteristics

Table 6.Thermal characteristics

Symbol Parameter

Conditions Min Typ Max Unit R th(j-mb)

thermal resistance from junction to mounting base

see Figure 5

-

0.78

0.92

K/W

7.Characteristics

Table 7.Characteristics

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source breakdown

voltage I D=250μA; V GS=0V;T j=25°C25--V I D=250μA; V GS=0V;T j=-55°C22.5--V

V GS(th)gate-source threshold voltage I D=1mA;V DS=V GS; T j=25°C;

see Figure 10; see Figure 11

1.05 1.54 1.95V

I D=10mA; V DS=V GS; T j=150°C0.5--V

I D=1mA;V DS=V GS; T j=-55°C-- 2.25V I DSS drain leakage current V DS=25V; V GS=0V;T j=25°C--1μA

V DS=25V; V GS=0V;T j=150°C--100μA I GSS gate leakage current V GS=16V; V DS=0V;T j=25°C--100nA

V GS=-16V; V DS=0V;T j=25°C--100nA

R DSon drain-source on-state

resistance V GS=4.5V; I D=25A; T j=25°C;

see Figure 12

-2 2.5m?

V GS=4.5V; I D=25A; T j=150°C;

see Figure 12; see Figure 13

--4m?

V GS=10V; I D=25A; T j=25°C;

see Figure 12

- 1.55 1.9m?

V GS=10V; I D=25A; T j=150°C;

see Figure 12; see Figure 13

-- 3.05m?

R G gate resistance f=1MHz-0.8 1.6?Dynamic characteristics

Q G(tot)total gate charge I D=25A; V DS=12V; V GS=10V;

see Figure 14; see Figure 15

-59-nC

I D=25A; V DS=12V; V GS=4.5V;

see Figure 14; see Figure 15

-28-nC

I D=0A; V DS=0V; V GS=10V-57-nC

Q GS gate-source charge I D=25A; V DS=12V; V GS=4.5V;

see Figure 14; see Figure 15-8.4-nC

Q GS(th)pre-threshold gate-source

charge

-6-nC

Q GS(th-pl)post-threshold gate-source

charge

- 2.4-nC Q GD gate-drain charge-7.8-nC V GS(pl)gate-source plateau voltage I D=25A; V DS=12V; see Figure 14;

see Figure 15

- 2.4-V

C iss input capacitance V DS=12V; V GS=0V;f=1MHz;

T j=25°C; see Figure 16-3735-pF

C oss output capacitance-880-pF C rss reverse transfer capacitance-316-pF

t d(on)turn-on delay time V DS=12V; R L=0.5?; V GS=4.5V;

R G(ext)=4.7?-27-ns

t r rise time-42-ns t d(off)turn-off delay time-49-ns t f fall time-23-ns

Q oss

output charge

V GS =0V; V DS =12V;f =1MHz;T j =25°C

-20

-nC

Source-drain diode V SD source-drain voltage I S =25A; V GS =0V;T j =25°C; see Figure 17

-0.8 1.1V t rr reverse recovery time I S =25A; dI S /dt =-100A/μs; V GS =0V; V DS =12V

-36-ns Q r recovered charge -30-nC t a reverse recovery rise time V GS =0V; I S =25A;

dI S /dt =-100A/μs; V DS =12V; see Figure 18

-20-ns t b

reverse recovery fall time

-

16

-

ns

Table 7.Characteristics …continued

Symbol Parameter Conditions

Min Typ Max Unit

分销商库存信息: NXP

PSMN1R7-25YLC,115

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