1.Product profile
1.1General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2Features and benefits
High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
1.3Applications
DC-to-DC converters Lithium-ion battery protection Load switching
Power OR-ing Server power supplies Sync rectifier
1.4Quick reference data
PSMN1R7-25YLC
N-channel 25 V 1.9 m ? logic level MOSFET in LFPAK using NextPower technology
Rev. 01 — 2 May 2011
Product data sheet
Table 1.Quick reference data
Symbol Parameter
Conditions Min Typ Max Unit V DS drain-source voltage 25°C ≤T j ≤175°C --25V I D drain current
T mb =25°C;V GS =10V; see Figure 1
[1]
--100A P tot total power dissipation T mb =25°C;see Figure 2
--164W T j junction temperature -55
-175°C Static characteristics
R DSon
drain-source on-state resistance
V GS =4.5V; I D =25A; T j =25°C; see Figure 12-2
2.5
m ?V GS =10V; I D =25A; T j =25°C; see Figure 12
-
1.55 1.9
m ?
[1]
Continuous current is limited by package
2.Pinning information
3.Ordering information
4.Marking
[1]
% = placeholder for manufacturing site code
Dynamic characteristics Q GD gate-drain charge V GS =4.5V; I D =25A; V DS =12V;see Figure 14; see Figure 15
-7.8-nC Q G(tot)
total gate charge
-28
-nC
Table 1.
Quick reference data …continued
Symbol Parameter Conditions
Min Typ Max Unit Table 2.Pinning information Pin
Symbol Description Simplified outline Graphic symbol
1S source SOT669 (LFPAK; Power-SO8)
2S source 3S source 4G gate
mb
D
mounting base; connected to drain
mb
1234
Table 3.
Ordering information
Type number
Package Name
Description
Version PSMN1R7-25YLC
LFPAK; Power-SO8
plastic single-ended surface-mounted package; 4 leads
SOT669
Table 4.
Marking codes
Type number Marking code [1]PSMN1R7-25YLC
1C725L
5.Limiting values
[1]Continuous current is limited by package
Table 5.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions Min Max Unit V DS drain-source voltage 25°C ≤T j ≤175°C
-25V V DGR drain-gate voltage 25°C ≤T j ≤175°C; R GS =20k ?
-25V V GS gate-source voltage -2020V I D drain current V GS =10V; T mb =25°C; see Figure 1[1]-100A V GS =10V; T mb =100°C; see Figure 1[1]
-100A I DM peak drain current pulsed; t p ≤10μs; T mb =25°C; see Figure 4
-894A P tot total power dissipation T mb =25°C; see Figure 2
-164W T stg storage temperature -55175°C T j junction temperature -55175°C T sld(M)peak soldering temperature -260°C V ESD electrostatic discharge voltage MM (JEDEC JESD22-A115)670-V Source-drain diode
I S source current T mb =25°C
-100A I SM peak source current pulsed; t p ≤10μs; T mb =25°C -894A Avalanche ruggedness
E DS(AL)S
non-repetitive drain-source avalanche energy
V GS =10V; T j(init)=25°C; I D =100A; V sup ≤25V; unclamped; R GS =50?; see Figure 3
-149
mJ
6.Thermal characteristics
Table 6.Thermal characteristics
Symbol Parameter
Conditions Min Typ Max Unit R th(j-mb)
thermal resistance from junction to mounting base
see Figure 5
-
0.78
0.92
K/W
7.Characteristics
Table 7.Characteristics
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown
voltage I D=250μA; V GS=0V;T j=25°C25--V I D=250μA; V GS=0V;T j=-55°C22.5--V
V GS(th)gate-source threshold voltage I D=1mA;V DS=V GS; T j=25°C;
see Figure 10; see Figure 11
1.05 1.54 1.95V
I D=10mA; V DS=V GS; T j=150°C0.5--V
I D=1mA;V DS=V GS; T j=-55°C-- 2.25V I DSS drain leakage current V DS=25V; V GS=0V;T j=25°C--1μA
V DS=25V; V GS=0V;T j=150°C--100μA I GSS gate leakage current V GS=16V; V DS=0V;T j=25°C--100nA
V GS=-16V; V DS=0V;T j=25°C--100nA
R DSon drain-source on-state
resistance V GS=4.5V; I D=25A; T j=25°C;
see Figure 12
-2 2.5m?
V GS=4.5V; I D=25A; T j=150°C;
see Figure 12; see Figure 13
--4m?
V GS=10V; I D=25A; T j=25°C;
see Figure 12
- 1.55 1.9m?
V GS=10V; I D=25A; T j=150°C;
see Figure 12; see Figure 13
-- 3.05m?
R G gate resistance f=1MHz-0.8 1.6?Dynamic characteristics
Q G(tot)total gate charge I D=25A; V DS=12V; V GS=10V;
see Figure 14; see Figure 15
-59-nC
I D=25A; V DS=12V; V GS=4.5V;
see Figure 14; see Figure 15
-28-nC
I D=0A; V DS=0V; V GS=10V-57-nC
Q GS gate-source charge I D=25A; V DS=12V; V GS=4.5V;
see Figure 14; see Figure 15-8.4-nC
Q GS(th)pre-threshold gate-source
charge
-6-nC
Q GS(th-pl)post-threshold gate-source
charge
- 2.4-nC Q GD gate-drain charge-7.8-nC V GS(pl)gate-source plateau voltage I D=25A; V DS=12V; see Figure 14;
see Figure 15
- 2.4-V
C iss input capacitance V DS=12V; V GS=0V;f=1MHz;
T j=25°C; see Figure 16-3735-pF
C oss output capacitance-880-pF C rss reverse transfer capacitance-316-pF
t d(on)turn-on delay time V DS=12V; R L=0.5?; V GS=4.5V;
R G(ext)=4.7?-27-ns
t r rise time-42-ns t d(off)turn-off delay time-49-ns t f fall time-23-ns
Q oss
output charge
V GS =0V; V DS =12V;f =1MHz;T j =25°C
-20
-nC
Source-drain diode V SD source-drain voltage I S =25A; V GS =0V;T j =25°C; see Figure 17
-0.8 1.1V t rr reverse recovery time I S =25A; dI S /dt =-100A/μs; V GS =0V; V DS =12V
-36-ns Q r recovered charge -30-nC t a reverse recovery rise time V GS =0V; I S =25A;
dI S /dt =-100A/μs; V DS =12V; see Figure 18
-20-ns t b
reverse recovery fall time
-
16
-
ns
Table 7.Characteristics …continued
Symbol Parameter Conditions
Min Typ Max Unit
分销商库存信息: NXP
PSMN1R7-25YLC,115