如何看懂MOSFET规格书
作为一个电源方面的工程师、技术人员，相信大家对MOSFET 都不会陌生。在电源论坛中，关于MOSFET
的帖子也应有尽有：MOSFET 结构特点/工作原理、MOSFET 驱动技术、MOSFET 选型、MOSFET
损耗计算等，论坛高手、大侠们都发表过各种牛贴，我也不敢在这些方面再多说些什么了。
工程师们要选用某个型号的MOSFET，首先要看的就是规格书/datasheet，拿到MOSFET 的规格书/datasheet 时，我们要怎么去理解那十几页到几十页的内容呢本帖的目的就是为了和大家分享一下我对MOSFET 规格书/datasheet 的理解和一些观点，有什么错误、不当的地方请大家指出，也希望大家分享一下自己的一些看法，大家一起学习。PS: 1. 后续内容中规格书/datasheet 统一称为datasheet2. 本帖中有关MOSFET datasheet 的数据截图来自英飞凌IPP60R190C6 datasheet1VDSDatasheet
上电气参数第一个就是V(BR)DSS，即DS 击穿电压，也就是我们关心的MOSFET 的耐压
此处V(BR)DSS的最小值是600V，是不是表示设计中只要MOSFET上电压不超过600V
MOSFET就能工作在安全状态
相信很多人的答案是“是!”，曾经我也是这么认为的，但这个正确答案是“不是!”
这个参数是有条件的，这个最小值600V是在Tj=25℃的值，也就是只有在Tj=25℃时，MOSFET上电压不超过600V 才算是工作在安全状态。
MOSFET
V(BR)DSS是正温度系数的，其实datasheet上有一张V(BR)DSS 与Tj的关系图(Table 17)，如下：要是电源用在寒冷的地方，环境温度低到-40℃甚至更低的话，MOSFET
V(BR)DSS值
所以在MOSFET使用中，我们都会保留一定的VDS的电压裕量，其中一点就是为了考虑到低温时MOSFET
V(BR)DSS值变小了，另外一点是为了应对各种恶例条件下开关机的VDS电压尖峰。2ID相信大家都知道MOSFET 最初都是按xA, xV 的命名方式（比如20N60~），慢慢的都转变成Rds(on)和电压的命名方式(比如IPx60R190C6, 190 就是指Rds(on)~).其实从电流到Rds(on)这种命名方式的转变就表明ID 和Rds(on)是有着直接联系的，那么它们之间有什么关系呢在说明ID 和Rds(on)的关系之前，先得跟大家聊聊封装和结温：1). 封装：影响我们选择MOSFET 的条件有哪些a) 功耗跟散热性能-->比如：体积大的封装相比体积小的封装能够承受更大的损耗；铁封比塑封的散热性能更好.b) 对于
高压MOSFET 还得考虑爬电距离-->高压的MOSFET 就没有SO-8 封装的，因为G/D/S 间的爬电距离不够c) 对于低压MOSFET 还得考虑寄生参数-->引脚会带来额外的寄生电感、电阻，寄生电感往往会影响到驱动信号，寄生电阻会影响到Rds(on)的值d) 空间/体积-->对于一些对体积要求严格的电源，贴片MOSFET 就显得有优势了2). 结温：MOSFET 的最高结温Tj_max=150℃，超过此温度会损坏MOSFET，实际使用中建议不要超过70%~90% Tj_max.回到正题，MOSFET
ID和Rds(on)的关系:
(1)
封装能够承受的损耗和封装的散热性能(热阻)之间的关系(2)
MOSFET通过电流ID产生的损耗(1),
(2)联立，计算得到ID和Rds_on的关系今天看到一篇文档，上面有提到MOSFET的寿命是跟温度有关的。（下图红色框中）3Rds(on)从MOSFET Rds(on)与Tj的图表中可以看到：Tj 增加Rds(on)增大，即Rds(on)是正温度系数，MOSFET的这一特性使得MOSFET易于并联使用。4Vgs(th)相信这个值大家都熟悉，但是Vgs(th)是负温度系数有多少人知道，你知道吗(下面两图分别来自BSC010NE2LS和IPP075N15N3 G datasheet.)相信会有很多人没有注意到Vgs(th)的这一特性，这也是正常
的，因为高压MOSFET的datasheet中压根就没有这个图，这一点可能是因为高压MOSFET的Vgs(th)值一般都是以上，高温时也就到2V左右。但对于低压MOSFET就有点不一样了，很多低压MOSFET的Vgs(th)在常温时就很低，比如
BSC010NE2LS的Vgs(th)是~2V，高温时最低都要接近了，这样只要在Gate有一个很小的尖峰就可能误触发MOSFET开启从而引起整个电源系统异常。所以，低压MOSFET使用时一定要留意Vgs(th)的这个负温度系数的特性！！5Ciss, Coss, CrssMOSFET
带寄生电容的等效模型
Ciss=Cgd+Cgs, Coss=Cgd+Cds, Crss=CgdCiss, Coss, Crss的容值
都是随着VDS电压改变而改变的，如下图：在LLC 拓扑中，减小死区时间可以提高效率，但过小的死区时间会导致无法实现ZVS。因此选择在VDS 在低压时Coss 较小的MOSFET 可以让LLC 更加容易实现ZVS，死区时间也可以适当减小，从而提升效率。6Qg, Qgs, Qgd从此图中能够看出：1. Qg并不等于Qgs+Qgd！！2. Vgs高，Qg大，而Qg大，驱动损耗大7SOASOA曲线可以分为4个部分：
1). Rds_on的限制，如下图红色线附近部分此图中：当VDS=1V 时，Y轴对应的ID为2A，Rds=VDS/ID= ==>Tj=150℃时，Rds(on)约为.当VDS=10V时，Y轴对应的ID为20A，Rds=VDS/ID=
==>Tj=150℃时，Rds(on)约为.所以，此部分曲线中，SOA表
现为Tj_max时RDS(on)的限制.MOSFET datasheet上往往只有Tc=25和80℃时的SOA，但实际应用中不会刚好就是在Tc=25或者80℃，这时候就得想办法把25℃或者80℃时的SOA转换成实际Tc时的曲线。怎样转换呢有兴趣的可以发表一下意见......2).最大脉冲电流限制，如下图红色线附近部分此部分为MOSFET的最大脉冲电流限制，此最大电流对应. VBR(DSS)击穿电压限制，如下图红色线附近部分此部分为MOSFET VBR(DSS)的限制，最大电压不能超过VBR(DSS) ==>所以在雪崩时，SOA图是没有参考意义的4). 器件所能够承受的最大的损耗限制，如下图红色线附近部分上述曲线是怎么来的这里以图中红线附近的那条线（10us）来分析。上图中，1处电压、电流分别为：88V, 59A，2处电压、电流分别为：600V, 。MOSFET要工作在SOA，即要让MOSFET的结温不超过
Tj_max(150℃)，Tj_max=Tc+PD*ZthJC, ZthJC为瞬态热阻. SOA图中，D=0，即为single pulse，红线附近的那条线上时间是10us即10^-5s，从瞬态热阻曲线上可以得到
ZthJC=*10^-2从以上得到的参数可以计算出：1处的Tj约为：25+88*59**10^-2=℃2处的Tj约为：25+600***10^-2=℃MOSFET datasheet上往往只有Tc=25和80℃时的SOA，但实际应用中不会刚好就是在Tc=25或者80℃，这时候就得想办法把25℃或者80℃时的SOA转换成实际Tc时的曲线。怎样转换呢有兴趣的可以发表一下意见~把25℃时的SOA转换成
100℃时的曲线：1). 在25℃的SOA上任意取一点，读出VDS, ID,时间等信息
如上图，1处电压、电流分别为：88V, 59A, tp=10us计算出对应的功耗：PD=VDS*ID=88*59=5192 （a）PD=(Tj_max-Tc)/ZthJC -->此图对应为Tc=25℃（b）（a），（b）联立，可以求得ZthJC=(Tj_max-25)/PD=. 对于同样的tp的SOA线上，瞬态热阻ZthJC保持不变，Tc=100℃，ZthJC= 上图中1点电压为88V，Tc=100℃时，PD=(Tj_max-100)/ZthJC=2083从而可以算出此时最大电流为I=PD/VDS=2083/88=. 同样的方法可以算出电压为600V，Tc=100℃时的最大电流5). 把电压电流的坐标在图上标出来，可以得到10us的SOA线，同样的方法可以得到其他tp对应的SOA（当然这里得到的SOA还需要结合Tc=100℃时的其他限制条件）这里的重点就是ZthJC，瞬态热阻在同样tp和D的条件下是一样的，再结合功耗，得到不同电压条件下的电流另外一个问题，ZthJC/瞬态热阻计算：1. 当占空比D不在ZthJC曲线中时，怎么计算2. 当tp1). 当占空比D不在ZthJC曲线中时：（其中，SthJC(t)是single pulse对应的瞬态热阻）2. 当tp8AvalancheEAS：单次雪崩能量，EAR：重复雪崩能量，IAR：重复雪崩电流雪崩时VDS,ID典型波形：上图展开后，如下：MOSFET雪崩时，波形上一个显著的特点是VDS电压被钳位，即上图中VDS有一个明显的平台MOSFET雪崩的产生：
在MOSFET的结构中，实际上是存在一个寄生三极管的，如上图。在MOSFET的设计中也会采取各种措施去让寄生三极管不起作用，如减小P+Body中的横向电阻RB。正常情况下，流过RB的电流很小，寄生三极管的VBE约等于0，三极管是处在关闭状态。雪崩发生时，如果流过RB的雪崩电流达到一定的大小，VBE大于三极管VBE的开启电压，寄生三极管开通，这样将会引起MOSFET无法正常关断，从而损坏MOSFET。因此，MOSFET的雪崩能力主要体现在以下两个方面：1. 最大雪崩电流==>IAR2. MOSFET的最大结温Tj_max ==>EAS、EAR 雪崩能量引起发热导致的温升
1）单次雪崩能量计算：上图是典型的单次雪崩VDS,ID波形，对应的单次雪崩能量为：
其中，VBR=, L为提供雪崩能量的电感
雪崩能量的典型测试电路如下：
计算出来EAS后，对比datasheet上的EAS值，若在datasheet 的范围内，则可认为是安全的（当然前提是雪崩电流同时，还得注意，EAS随结温的增加是减小的，如下图：
2）重复雪崩能量EAR：
上图为典型的重复雪崩波形，对应的重复雪崩能量为：
其中，VBR=.计算出来EAR后，对比datasheet上的EAR值，若在datasheet的范围内，则可认为是安全的（此处默认重复雪崩电流同时也得考虑结温的影响9体内二极管参数
VSD，二极管正向压降==>这个参数不是关注的重点,trr，二极管反向回复时间==>越小越好，Qrr，反向恢复电荷==>Qrr 大小关系到MOSFET的开关损耗，越小越好，trr越小此值也会小10不同拓扑MOSFET 的选择针对不同的拓扑，对MOSFET的参数有什么不同的要求呢怎么选择适合的MOSFET
欢迎大家发表意见，看法1). 反激：反激由于变压器漏感的存在，MOSFET会存在一定的尖峰，因此反激选择MOSFET 时，我们要注意耐压值。通常对于全电压的输入，MOSFET 耐压(BVDSS)得选600V以上，一般会选择650V。若是QR反激，为了提高效率，我们会让MOSFET开通时的谷底电压尽量低，这时需要取稍大一些的反射电压，这样MOSFET的耐压值得选更高，通常会选择800V MOSFET。
2). PFC、双管正激等硬开关：a) 对于PFC、双管正激等常见硬开关拓扑，MOSFET没有像反激那么高的VDS尖峰，通常MOSFET耐压可以选500V, 600V。b) 硬开关拓扑MOSFET存在较大的开关损耗，为了降低开关损耗，我们可以选择开关更快的MOSFET。而Qg的大小直接影响到MOSFET的开关速度，选择较小Qg的MOSFET有利于减小硬开关拓扑的开关损耗
3). LLC谐振、移相全桥等软开关拓扑：LLC、移相全桥等软开关拓扑的软开关是通过谐振，在MOSFET开通前让MOSFET
的体二极管提前开通实现的。由于二极管的提前导通，在MOSFET开通时二极管的电流存在一个反向恢复，若反向恢复的时间过长，会导致上下管出现直通，损坏MOSFET。因此在这一类拓扑中，我们需要选择trr，Qrr小，也就是选择带有快恢复特性的体二极管的MOSFET。
4). 防反接，Oring MOSFET这类用法的作用是将MOSFET作为开关，正常工作时管子一直导通，工作中不会出现较高的频率开关，因此管子基本上无开关损耗，损耗主要是导通损耗。选择这类MOS时，我们应该主要考虑Rds(on)，而不去关心其他参数。
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常见大中功率管三极管参数 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1402 1500V 5A 120W * * NPN 2SD1399 1500V 6A 60W * * NPN 2SD1344 1500V 6A 50W * * NPN 2SD1343 1500V 6A 50W * * NPN 2SD1342 1500V 5A 50W * * NPN 2SD1941 1500V 6A 50W * * NPN 2SD1911 1500V 5A 50W * * NPN 2SD1341 1500V 5A 50W * * NPN 2SD1219 1500V 3A 65W * * NPN 2SD1290 1500V 3A 50W * * NPN 2SD1175 1500V 5A 100W * * NPN 2SD1174 1500V 5A 85W * * NPN 2SD1173 1500V 5A 70W * * NPN 2SD1172 1500V 5A 65W * * NPN 2SD1143 1500V 5A 65W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1142 1500V 3.5A 50W * * NPN 2SD1016 1500V 7A 50W * * NPN 2SD995 2500V 3A 50W * * NPN 2SD994 1500V 8A 50W * * NPN 2SD957A 1500V 6A 50W * * NPN 2SD954 1500V 5A 95W * * NPN 2SD952 1500V 3A 70W * * NPN 2SD904 1500V 7A 60W * * NPN 2SD903 1500V 7A 50W * * NPN 2SD871 1500V 6A 50W * * NPN 2SD870 1500V 5A 50W * * NPN 2SD869 1500V 3.5A 50W * * NPN 2SD838 2500V 3A 50W * * NPN 2SD822 1500V 7A 50W * * NPN 2SD821 1500V 6A 50W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD348 1500V 7A 50W * * NPN 2SC4303A 1500V 6A 80W * * NPN 2SC4292 1500V 6A 100W * * NPN 2SC4291 1500V 5A 100W * * NPN 2SC4199A 1500V 10A 100W * * NPN 2SC3883 1500V 5A 50W * * NPN 2SC3729 1500V 5A 50W * * NPN 2SC3688 1500V 10A 150W * * NPN
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SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Document Number: 88392For technical questions within your region, please contact one of the following:https://www.doczj.com/doc/3e10485983.html, Surface Mount T RANS Z ORB ? Transient Voltage Suppressors FEATURES ?Low profile package ?Ideal for automated placement ?Glass passivated chip junction ? ?cycle): 0.01 % ?Excellent clamping capability ?Very fast response time ?Low incremental surge resistance ?Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ?Solder dip 260 °C, 40 s ?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use C or CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. PRIMARY CHARACTERISTICS V WM 5.0 V to 188 V P PPM 600 W I FSM (uni-directional only) 100 A T J max. 150 °C DO-214AA (SMB J-Bend) Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above T A = 25 °C per Fig. 2(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (Fig. 1) P PPM 600 W Peak pulse current with a 10/1000 μs waveform (1) I PPM See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) I FSM 100 A Operating junction and storage temperature range T J , T STG - 55 to + 150 °C
Description The PICO ? II Slo-Blo ? Fuse combines time-delay performance characteristics with the proven reliability of a PICO ? Fuse.Agency Approvals Features Electrical Characteristics t &OIBODFE JOSVTI XJUITUBOE t 4NBMM TJ[F t 8JEF SBOHF PG DVSSFOU SBUJOHT N" " t 3P)4 DPNQMJBOU t )BMPHFO GSFF BWBJMBCMF t 8JEF PQFSBUJOH UFNQFSBUVSF SBOHF t -PX UFNQFSBUVSF EF SBUJOH Applications Electrical Characteristics t 'MBUoQBOFM %JTQMBZ 57 t -$% NPOJUPS t -JHIUJOH TZTUFN t .FEJDBM FRVJQNFOU t *OEVTUSJBM FRVJQNFOU
?2009 Littelfuse, Inc. 473 Series Average Time Current Curves 1000 100 10 1 0.1 0.01 1000 100 101 0.1 .375A .50A .75A 1.0A 1.5A 2.0A 2.5A 3.0A 3.5A 4.0A 5.0A 7.0A T I M E I N S E C O N D S CURRENT IN AMPERES T emperature Rerating Curve Soldering Parameters Recommended Hand-Solder Parameters:4PMEFS *SPO 5FNQFSBUVSF ? $ ?$)FBUJOH 5JNF TFDPOET NBY Note: These devices are not recommended for IR or Convection Reflow process. Recommended Process Parameters: /PUF %FSBUJOH EFQJDUFE JO UIJT DVSWF JT JO BEEJUJPO UP UIF TUBOEBSE EFSBUJOH PG GPS continuous operation.
SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Case : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : Plated axial leads, solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.0007 ounce, 0.02 grams Glass passivated device Ideal for surface mouted applications FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ES1BL SYMBOLS UNITS Metallurgically bonded construction High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension Low reverse leakage 10070100400280400150105150600420600 VOLTS VOLTS VOLTS Amp Amps Volts V RRM V RMS V DC I (AV) I FSM V F 1.0 25.0 1.25 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C I R 5.0100.0A μRatings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. ES1AL THRU ES1JL ES1CL ES1DL ES1EL ES1JL EB EC ED EE EJ EG ES1GL Maximum reverse recovery time (NOTE 1)Typical junction capacitance (NOTE 2) C J pF ELECTRONICS CO.,LTD. STAR SEA Operating junction and storage temperature range Note:R θJA T J ,T STG 8510-55 to +150 C Typical thermal resistance (NOTE 3)K/W 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 3.PCB mounted on 0.2*0.2" (5.0*5.0mm) coppeer pad area. 35ns 503550EA ES1AL trr 200140200 3002103000.95 1.7 SOD-123FL Dimensions in millimeters
大功率三极管参数 MJ15024 | NPN | 250V | 16A | 250 W MJ15025 | PNP | 250V | 16A |250 W E13005-2是“高速/高压开关管” 参数：硅、NPN、700V/400V 、8A 、75W 、β≥10 三极管参数大全 BU2525AF NPN 30 开关功放1500V12A150W /350NS BU2525AX NPN 30 开关功放1500V12A150W /350NS BU2527AF NPN 30 开关功放1500V15A150W BU2532AW NPN 30 开关功放1500V15A150W(大屏) BUH515 NPN BCE 行管1500V10A80W BUH515D NPN BCE 行管1500V10A80W(带阻尼) BUS13A NPN 12 开关功放1000V15A175W BUS14A NPN 12 开关功放1000V30A250W BUT11A NPN 28 开关功放1000V5A100W BUT12A NPN 28 开关功放450V10A125W BUV26 NPN 28 音频功放开关90V14A65W /250ns BUV28A NPN 28 音频功放开关225V10A65W /250ns BUV48A NPN 30 音频功放开关450V15A150W BUW13A NPN 30 功放开关1000V15A150W BUX48 NPN 12 功放开关850V15A125W BUX84 NPN 30 功放开关800V2A40W BUX98A NPN 12 功放开关400V30A210W5MHZ DTA114 PNP 10K-10K 160V0.6A0.625W(带阻) DTC143 NPN 录像机用4.7K-4.7K HPA100 NPN BCE 大屏彩显行管21# HPA150 NPN BCE 大屏彩显行管21# HSE830 PNP BCE 音频功放80V115W1MHZ HSE838 NPN BCE 音频功放80V115W1MHZ COP/MJ4502 MN650 NPN BCE 行管1500V6A80W MJ802 NPN 12 音频功放开关90V30A200W MJ2955 PNP 12 音频功放开关60V15A115W MJ3055 NPN 12 音频功放开关60V15A115W MJ4502 PNP 12 音频功放开关90V30A200W COP/MJ802 MJ10012 NPN 12 达林顿400V10A175W MJ10015 NPN 12 电源开关400V50A200W
发光二极管产品规格书 发光二极管产品规格书 型号 : H2B01ARD04 注意谨防静电! 制作核准顾客 Page 1 of 4 Created with novaPDF Printer (https://www.doczj.com/doc/3e10485983.html,). Please register to remove this message. H2B01ARD04 文件编号: BF-2005-03-040 产品特征 直径为3mm圆型 高亮红色,低功耗 外观为有色散射 产品应用 各类仪表指示光源 小区域 产品外型图 注: 所有的尺寸单位为毫米(mm),公差为 0.20mm 产品指南 光强Iv(mcd)@20mA 型号发光颜色芯片材料胶体颜色 Min. Typ. Max. 半功率角度 2θ1/2 H2B01ARD04 红色 ALGaAs 有色散射 40 60 --- 60 注: 中心轴亮度50%时单边的发光角度为θ1/2, 2θ1/2=θ1/2+θ1/2 Page 2 of 4 Created with novaPDF Printer (https://www.doczj.com/doc/3e10485983.html,). Please register to remove this message. H2B01ARD04 文件编号: BF-2005-03-040 最大限度性能参数(Ta=25℃) 项目符号最大限度单位 功率消耗 PD 80 mW 峰值正向电流 1/10占空比 0.1ms 脉宽 IFP 100 mA 正向电流 IF 20 mA 反向电压 VR 5 V 工作温度 Topr -25℃～+80℃ 储存温度 Tstg -25℃～+100℃ 焊接温度Tsol 260℃下5秒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors NST3946 General purpose transistors (dual transistors) DESCRIPTION It is designed for general purpose amplifier applications . By putting two mount applications where board space is at a premium. z Low V CE(sat) z Simplifies Circuit Design z Reduces Board Space z Reduces Component Count Marking: 46 Equivalent circuit 1
CBO V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -200 mA P C Collector Power Dissipation 150 mW R θJA Thermal Resistance from Junction to Ambient 833 ℃/W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C = 0 -5 V Collector cut-off current I CBO V CB =-30V, I E = 0 -0.05 μA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.05μA V CE =-1V, I C = -0.1mA 60 V CE =-1V, I C = -1mA 80 V CE =-1V, I C = -10mA 100 300 V CE =-1V, I C = -50mA 60 DC current gain h FE V CE =-1V, I C = -100mA 30 I C =-10mA, I B =-1mA -0.25V Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-5mA -0.4 V I C =-10mA, I B =-1mA -0.65 -0.85 V Base-emitter saturation voltage V BE(sat) I C =-50mA, I B =-5mA -0.95V Transition frequency f T V CE =-20V, I C =-10mA, f=100MHz 250 MHz Output capacitance C ob V CB =-5V, I E =0, f=1MHz 4.5 pF
DSK32 THRU DSK310SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -3.0 Ampere 1of 2
RATINGS AND CHARACTERISTIC CURVES DSK32 THRU DSK310 FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD FIG. 1- FORWARD CURRENT DERATING CURVE A V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E S I N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E S P E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E S INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 10 1 0.1 0.010.001 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS I N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I L L I A M P E R E S AMBIENT TEMPERATURE, C 2of 2
SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Case : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : S olderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.006 ounce, 0.02 grams Glass passivated device Ideal for surface mouted applications FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension Low reverse leakage Note: 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted ELECTRONICS CO.,LTD. LING JIE STAR SEA Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. DSR1A THRU DSR1M 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 1.Averaged over any 20ms period. DSR1B SYMBOLS 10070100400280400200140200 600420600800560800 V RRM V RMS V DC I (AV) I FSM V F 1.0 25.01.1Operating junction and storage temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at T A =65 C (NOTE 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =125 C Typical junction capacitance (NOTE 2)I R 10.050.0R θJA C J T J ,T STG 1804-55 to +150 Typical thermal resistance (NOTE 3) UNITS VOLTS VOLTS VOLTS Amp Amps Volts pF C A μK/W DSR1D DSR1G DSR1J DSR1K S1B S1D S1G S1J S1K T L =25 C 503550S1A DSR1A 10007001000 DSR1M S1M SOD-123FL Dimensions in millimeters
常用贴片三极管主要参数(SOT-23) 序号型号 TYPE 极性 POLA RITY P D (mW) I C (mA) BV CBO (V) BV CEO (V) h FE V CE(sat)I C/I B f TYPE (MHZ) 打标 Marking Min/Max I C mA V CE Volts Max Volts mA 1S9012PNP3005004025120/3505010.6500501502T1 2S9013NPN3005004025120/3505010.650050150J3 3S9014NPN2001005045200/1000150.31005150J6 4S9015PNP2001005045200/1000150.310010150M6 5S9018NPN20050251870/190 1.O50.51001600J8 6S8050NPN3005004025120/3505010.650050150J3Y 7S8550PNP3005004025120/3505010.6500501502TY 8SS8050NPN1001500402585/30010010.58008080Y1 9SS8550PNP1001500402585/30010010.58008080Y2 10C1815NPN20015060500130/400260.251001080HF 11A1015PNP2001505050130/400260.31001080BA 12C945NPN2001506050130/400160.310010150CR 13A733PNP2001506050120/475160.31001050CS 142SC1623NPN200100605090/600160.310010250L4、L5、L6、L7 15M28S NPN20010004020300/1000010010.556002010028S 16M8050NPN2001000402580/30010010.580080150Y11 17M8550PNP2001000402585/30010010.580080150Y21 18MMBT5551NPN30060018016080/25010 5.O0.550 5.O80G1 19MMBT5401PNP300600160150100/20010 5.O0.5500.51002L 20MMBTA42NPN300300300300100/20010100.2202501D 21MMBTA92NPN300300300300100/20010100.2202502D 222SC2412NPN2001506050120/560160.4505180BQ、BR、BS 232SC3356NPN300100201250/30020100.51057000R23、R24、R25 242SC3837NPN30050301856/39010100.52041500CN、CP、CQ、CR 252SC3838NPN30050201156/3905100.51053200AN、AP、AQ、AR 26BC807-16PNP2255005045100/25010010.7500502005A 27BC807-25PNP2255005045160/40010010.7500502005B 28BC807-40PNP2255005045250/60010010.7500502005C 29BC817-16NPN2255005045100/25010010.7500502006A 30BC817-25NPN2255005045160/40010010.7500502006B 31BC817-40NPN2255005045250/60010010.7500502006C 32BC846A NPN2251008065110/220250.610051001A 33BC846B NPN2251008065200/450250.610051001B 34BC847A NPN2251005045110/220250.610051001E 35BC847B NPN2251005045200/450250.610051001F 36BC847C NPN2251005045420/800250.610051001G 37BC848A NPN2251003030110/220250.610051001J 38BC848B NPN2251003030200/450250.610051001K 39BC848C NPN2251003030450/800250.610051001L 40BC858A PNP2251008065125/250250.6510051003A 41BC858B PNP2251008065220/475250.6510051003B 42BC857A PNP2251005045125/250250.6510051003E 43BC857B PNP2251005045220/475250.6510051003F 44BC875C PNP2251005045420/800250.6510051003G