第２８卷第１ｌ期２００７年１１月
半导体学报
ＣＨＩＮＥＳＥＪＯＵＲＮＡＬｏＦＳＥＭＩＣＯＮＤＵＣＴＯＲＳ
Ｖ０１．２８Ｎｏ．１１
Ｎｏｖ．，２００７
ＧａＮＭＯＳ－－ＨＥＭＴＵｓｉｎｇＵｌｔｒａｔｈｉｎＡ１２０３Ｄｉｅｌｅｃｔｒｉｃｗｉｔｈ
‰ｘ．ｏｆ３０。８ＧＨｚ’
ＨａｏＹｕｅ’，ＹｕｅＹｕａｎｚｈｅｎｇ，ＦｅｎｇＱｉａｎ，ＺｈａｎｇＪｉｎｃｈｅｎｇ，ＭａＸｉａｏｈｕａ，ａｎｄＮｉＪｉｎｙｕ（ＫｅｙＬａｂｏｒａｔｏｒｙ
ｏｆ聊如Ｂａｎｄ—ＧａｐＳｅｍｉｃｏｎｄｕｃｔｏｒＭａｔｅｒｉａｌｓａｎｄＤｅｖｉｃｅｓ，ＸｉｄｉａｎＵｎｉｖｅｒｓｉｔｙ，施’ａｎ７１００７１，Ｃｈｉｎａ）
Ａｂｓｔｒａｃｔ：ＷｅｒｅｐｏｒｔｏｎａＧａＮｍｅｔａｌ－ｏｘｉｄｅ－ｓｅｍｉｃｏｎｄｕｃｔｏｒｈｉ醢ｅｌｅｃｔｒｏｎｍｏｂｉｌｉｔｙｔｒａｎｓｉｓｔｏｒ（ＭＯＳ－ＨＥＭＴ）ｕｓｉｎｇａｔｏｍｉｃ－ｌａｙｅｒｄｅｐｏｓｉｔｅｄ（ＡＬＤ）魁０３ａｓｔｈｅｇａｔｅｄｉｅｌｅｃｔｒｉｃ。Ｔｈｒｏｕｇｈｄｅｃｒｅａｓｉｎｇｔｈｅｔｈｉｃｋｎｅｓｓｏｆｔｈｅｇａｔｅｏｘｉｄｅｔｏ３．５ｎｍ，ａｄｅｖｉｃｅｗｉｔｈｍａｘｉｍｕｍｔｒａｎｓｃｏｎｄｕｃｔａｎｃｅｏｆ１３０ｍＳ／ｍｍｉｓｐｒｏｄｕｃｅｄ．Ｔｈｅｄｒａｉｎｃｕｒｒｅｎｔｏｆｔｈｉｓ１“ｍｇａｔｅ－ｌｅｎｇｔｈＭＯＳ－ＨＥＭＴｃａｎｒｅａｃｈ７２０ｍＡ／ｍｍａｔ＋３．０Ｖｇａｔｅｂｉａｓ．Ｔｈｅｕｎｉｔｙｃｕｒｒｅｎｔｇａｉｎｃｕｔｏｆｆｆｒｅｑｕｅｎｃｙａｎｄｍａｘｉ－ｍｕｍｆｒｅｑｕｅｎｃｙｏｆｏｓｃｉｌｌａｔｉｏｎａｒｅｏｂｔａｉｎｅｄａｓ１０。１ａｎｄ３０。８ＧＨｚ，ｒｅｓｐｅｃｔｉｖｅｌｙ．
Ｋｅｙｗｏｒｄｓ；Ａ１ＧａＮ／ＧａＮ；ＭＯＳ－ＨＥＭＴｕｌｔｒａｔｈｉｎＡ１２０ｂ
ＥＥＡＣＣ：２５６０ＰＡＣＣ：７３６０
ＣＬＣｎｕｍｂｅｒ：ＴＮ３８６Ｄｏｃｕｍｅｎｔｃｏｄｅ：ＡＡｒｔｉｃｌｅＩＤ：０２５３－４１７７（２００７）１１．１６７４．０５
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１Ｉｎｔｒｏｄｕｃｔｉｏｎ
ｏｎｅｏｆｔｈｅｍａｊｏｒｆａｃｔｏｒｓｔｈａｔｌｉｍｉｔｔｈｅｐｅｒ．ｆｏｒｍａｎｃｅａｎｄｒｅｌｉａｂｉｌｉｔｙｏｆＡｌＧａＮ／ＧａＮＨＥＭＴｆｏｒｈｉｇｈ－ｐｏｗｅｒｒａｄｉｏ—ｆｒｅｑｕｅｎｃｙ（ＲＦ）ａｎｄｈｉｇｈｔｅｍｐｅｒａｔｕｒｅａｐｐｌｉｃａｔｉｏｎｓｉｓｔｈｅｉｒｈｉｇｈｇａｔｅｌｅａｋａｇｅｄｕｅｔｏｔｈｅｓｕｒｆａｃｅｄｅｆｅｃｔｓａｎｄｆｉｎｉｔｅｂａｒｒｉｅｒｈｅｉｇｈｔ‘“。Ｔｈｅｈｉｇｈｇａｔｅｌｅａｋａｇｅｄｉｒｅｃｔｌｙｉｍｐａｃｔｓｔｈｅｄｒａｉｎｂｒｅａｋｄｏｗｎｖｏｌｔａｇｅ，ＲＦｐｅｒｆｏｒｍａｎｃｅ，ａｎｄｎｏｉｓｅｆｉｇｕｒｅｏｆｔｈｅｄｅｖｉｃｅ．Ｉｎｔｈｅｐａｓｔ，ｓｅｖｅｒａｌｇｒｏｕｐｓａｔｔｅｍｐｔｅｄｔｏｓｕｐｐｒｅｓｓｔｈｅｇａｔｅｌｅａｋａｇｅｂｙ
ｕｓｉｎｇｔｈｅｍｅｔａｌ．．ｉｎｓｕｌａｔｏｒ．．ｓｅｍｉｃｏｎｄｕｃｔｏｒｆｉｅｌｄ，。ｅｆｆｅｃｔ．ｔｒａｎｓｉｓｔｏｒ（ＭＩＳＦＥＴ）ｃｚａｌｏｒｍｅｔａｌ．ｏｘｉｄｅ．ｓｅｍｉｃｏｎｄｕｃｔｏｒｆｉｅｌｄ．ｅｆｆｅｃｔ．ｔｒａｎｓｉｓｔｏｒ（ＭＯＳ．擎嚣薯）Ｌ引ａｐｐｒｏａｃｈｅｓ．Ｈｏｗｅｖｅｒ。ｔｈｅｓｅｉｎｓｕｌａｔｅｄｇａｔｅｄｅｖｉｃｅｓｗｅｒｅｎｏｔｓｕｐｅｒｉｏｒｉｎｍａｎｙｒｅｓｐｅｃｔｓｔｏｔｈｅｓｔａｔｅ．ｏｆ—ｔｈｅ．ａｒｔＡＩＧａＮ／ＧａＮＨＥＭＴｓ．Ｍｏｒｅｒｅ．ｃｅｎｔｌｙ，ｓｉｇｎｉｆｉｃａｎｔｐｒｏｇｒｅｓｓｈａｓｂｅｅｎｍａｄｅｏｎｍｅｔ—ａ１．．ｉｎｓｕｌａｔｏｒ．．ｓｅｍｉｃｏｎｄｕｃｔｏｒｈｉｇｈｅｌｅｃｔｒｏｎｍｏｂｉｌｉｔｙｔｒａｎｓｉｓｔｏｒｓ（ＭＩＳ—ＨＥＭＴ）ａｎｄｍｅｔａｌ．ｏｘｉｄｅ．ｓｅｍｉ。ｃｏｎｄｕｃｔｏｒｈｉｇｈｅｌｅｃｔｒｏｎｍｏｂｉｌｉｔｙｔｒａｎｓｉｓｔｏｒｓ（ＭＯＳ。｝董嚣Ｍ零）ｕｓｉｎｇＳｉ（）２‘５～钉，Ｓｉ３套“‘１。ｍ】，Ａ１２０３Ｌ１２Ｊ（ｆｏｒｍｅｄｂｙｅｌｅｃｔｒｏｎｃｙｃｌｏｔｒｏｎｒｅｓｏｎａｎｃｅｐｌａｓｍａｏｘｉｄａｔｉｏｎｏｆ
Ａ１）。ａｎｄｏｔｈｅｒｏｘｉｄｅｓＣｌ３，１引．Ｉｎｔｈｉｓｗｏｒｋ，ｗｅｒｅｐｏｒｔｏｎｔｈｅｆａｂｒｉｃａｔｉｏｎａｎｄｃｈａｒａｃｔｅｒｉｚａｔｉｏｎｏｆＡｌＧａＮ／ＧａＮＭＯＳ．ＨＥＭＴｗｉｔｈａｔｏｍｉｃ－ｌａｙｅｒ－ｄｅｐｏｓｉｔｅｄ舭０３ａｓｔｈｅｇａｔｅｄｉｅ?ｌｅｃｔｒｉｃ．ＳｉｍｉｌａｒｔｏＳｉ０２，Ｓｉ３Ｎ４，ａｎｄＳｃ２０§Ｅ１４３，Ａ１２０３
ａｓａｇａｔｅｄｉｅｌｅｃｔｒｉｃｃａｎｓｉｇｎｉｆｉｃａｎｔｌｙｒｅｄｕｃｅｔｈｅｇａｔｅｌｅａｋａｇｅ，ｗｈｉｃｈａｌｌｏｗｓｆｏｒａｐｐｌｉｃａｔｉｏｎｏｆｈｉｇｈ
ｐｏｓｉｔｉｖｅｇａｔｅｖｏｌｔａｇｅｔｏｆｕｒｔｈｅｒｉｎｃｒｅａｓｅｔｈｅｓｈｅｅｔ
ｅｌｅｃｔｒｏｎｄｅｎｓｉｔｙｉｎｔｈｅ２Ｄｃｈａｎｎｅｌ．Ｉｔａｌｓｏｏｆｆｅｒｓｔｈｅａｄｄｉｔｉｏｎａｌｂｅｎｅｆｉｔｓｏｆａｗｉｄｅｂａｎｄｇａｐ（９ｅＶ），
ｈｉｇｈｄｉｅｌｅｃｔｒｉｃｃｏｎｓｔａｎｔ（Ⅳ≈１０），ｈｉｇｈｂｒｅａｋｄｏｗｎｆｉｅｌｄ（５～１０ＭＶ／ｃｍ）。ｔｈｅｒｍａｌｓｔａｂｉｌｉｔｙ（ａｍｏｒ．
ｐｈｏｕｓｕｐｔｏａｌｌｃ：ａｓｔ１０００℃），ａｎｄｃｈｅｍｉｃａｌｓｔａｂｉｌｉ．ｔｙｗｈｅｎｃｏｍｐａｒｅｄｔｏＡｌＧａＮ．Ａｔｏｍｉｃｌａｙｅｒｄｅｐｏ－ｓｉｔｉｏｎ（ＡＬＤ）ｉｓａｓｕｒｆａｃｅｃｏｎｔｒｏｌｌｅｄｌａｙｅｒ．ｂｙ—ｌａｙｅｒｐｒｏｃｅｓｓｆｏｒｔｈｅｄｅｐｏｓｉｔｉｏｎｏｆｔｈｉｎｆｉｌｍｓｗｉｔｈａｔｏｍ．ｉｃｌａｙｅｒａｃｃｕｒａｃｙ。Ｅａｃｈａｔｏｍｉｃｌａｙｅｒｆｏｒｍｅｄｉｎｔｈｅｓｅｑｕｅｎｔｉａｌｐｒｏｃｅｓｓｉｓａｒｅｓｕｌｔｏｆｓａｔｕｒａｔｅｄｓｕｒｆａｃｅｃｏｎｔｒｏｌｌｅｄｃｈｅｍｉｃａｌｒｅａｃｔｉｏｎｓ．ＴｈｅｑｕａｌｉｔｙｏｆｔｈｉｓＡ己ＤＡ１２（Ｘｉｓｍｕｃｈｈｉｇｈｅｒｔｈａｎｔｈｏｓｅｄｅｐｏｓｉｔｅｄｂｙｏｔｈｅｒｍｅｔｈｏｄｓ．ＴｈｅＡＬＤｅｑｕｉｐｍｅｎｔ
ｆｏｒ舢２０３ｈａｓｄｅｍｏｎｓｔｒａｔｅｄｌｏｗｄｅｆｅｃｔｄｅｎｓｉｔｙ，ｈｉｇｈｕｎｉ－ｆｏｒｍｉｔｙ，ａｎｄｎａｎｏｍｅｔｅｒｓｃａｌａｂｉｌｉｔｙ．
２Ｄｅｖｉｃｅｓｔｒｕｃｔｕｒｅａｎｄｆａｂｒｉｃａｔｉｎｇｐｒｏｃｅｓｓ
ＩｎＦｉｇ．１，ｔｈｅｄｅｖｉｃｅｓｔｒｕｃｔｕｒｅｏｆｔｈｅｆａｂｒｉｃａ—ｔｅｄＡＬＤＡｌｚ０３／ＡＩＧａＮ／ＧａＮＭＯＳ—ＨＥＭＴｉｓｐｒｅｓｅｎｔｅｄ．Ｉｔｗａｓｇｒｏｗｎｂｙｍｅｔａｌ—ｏｒｇａｎｉｃｃｈｅｍｉ—ｃａｌｖａｐｏｒｄｅｐｏｓｉｔｉｏｎａｎｄｃｏｎｓｉｓｔｅｄｏｆａ４０ｎｍａｎ?
＊ＰｒｏｊｅｃｔｓｕｐｐｏｒｔｅｄｂｙｔｈｅＳｔａｔｅＫｅｙＤｅｖｅｌｏｐｍｅｎｔＰｒｏｇｒａｍｆｏｒＢａｓｉｃＲｅｓｅａｒｃｈｏｆＣｈｉｎａ（Ｎｏ．５１３２７０２０３０１）
ｔＣｏｒｒｅｓｐｏｎｄｉｎｇａｕｔｈｏｒ．Ｅｍａｉｌ：ｙｈａｏ（西ｘｉｄｉａｎ．ｅｄｕ．ｃｎ
Ｒｅｃｅｉｖｅｄ２３Ｍａｙ２００７，ｒｅｖｉｓｅｄｍａｎｕｓｃｒｉｐｔｒｅｃｅｉｖｅｄ２Ｊｕｌｙ２００７④２００７ＣｈｉｎｅｓｅＩｎｓｔｉｔｕｔｅｏｆＥｌｅｃｔｒｏｎｉｃｓ
第１１期ＨａｏＹｕｅｅｔａ１．：ＧａＮＭＯＳ－ＨＥＭＴＵｓｉｎｇＵｌｔｒａｔｈｉｎＡ１２０３Ｄｉｅｌｅｃｔｒｉｃｗｉｔｈ‰ｏｆ３０．８ＧＨｚ１６７５
Ｆｉｇ．１ＳｃｈｅｍａｔｉｃｖｉｅｗｏｆａｎＡＩＧａＮ／ＧａＮＭＯＳ－
ＨＥＭＴｗｉｔｈＡＬＤ－ｇｒｏｗｎＡ１２０３ａｓｇａｔｅｄｉｅｌｅｃｔｒｉｃ
ｄｏｐｅｄＡｌＮｂｕｆｆｅｒｌａｙｅｒ?ａｌｐｍｕｎｄｏｐｅｄＧａＮｌａｙ—ｅｒ，ａｎｄａ２５ｎｍｎ－Ａｌｏ．３Ｇａｏ．７Ｎｂａｒｒｉｅｒｌａｙｅｒ（２×１０１８ｃｍ－３）ｏｎａ５０ｍｍｓａｐｐｈｉｒｅｓｕｂｓｔｒａｔｅ．ＴｈｅｒｏｏｍｔｅｍｐｅｒａｔｕｒｅＨａｌｌｍｏｂｉｌｉｔｙ１１５０ｃｍ２／（Ｖ?ｓ）ａｎｄｓｈｅｅｔｃａｒｒｉｅｒｃｏｎｃｅｎｔｒａｔｉｏｎ１．２×１０１３ｃｍ一２ｗｅｒｅｍｅａｓｕｒｅｄ．ＡｍｅｓａｉｓｏｌａｔｉｏｎｐｒｏｃｅｓｓｗｉｔｈａＢＣｌ３ｐｌａｓｍａｒｅａｃｔｉｖｅｉｏｎｅｔｃｈｉｎｇｗａｓｕｓｅｄｆｏｒｄｅ．ｖｉｃｅｉｓｏｌａｔｉｏｎ．Ｔｈｅｓｏｕｒｃｅ—ｄｒａｉｎｏｈｍｉｃｃｏｎｔａｃｔｓｗｅｒｅｆｏｒｍｅｄｗｉｔｈａＴｉ（３０ｎｍ）／～（１８０ｎｍ）／Ｎｉ（５５ｎｍ）｜氏ｕ（４５ｎｍ）ｓｔｒｕｃｔｕｒｅ．Ｔｈｅｓｅｃｏｎｔａｃｔｓｗｅｒｅａｎｎｅａｌｅｄａｔ８３０℃ｆｏｒ６０ｓｕｓｉｎｇｒａｐｉｄｔｈｅｒｍａｌａｎ．ｈｅａｌｉｎｎｉｔｒｏｇｅｎａｔｍｏｓｐｈｅｒｅ．Ａ３．５ｎｍ趟２０３ｌａｙｅｒｗａｓｄｅｐｏｓｉｔｅｄｏｎｈａｌｆｏｆｔｈｅｗａｆｅｒａｔ３００℃．ＵｓｉｎｇＮｉ／Ａｕ（２０ｎｍ／２００ｎｍ）ｆｏｒｔｈｅｇａｔｅｅｌｅｃｔｒｏｄｅｆａｂ．ｒｉｃａｔｉｏｎ，ｔｗｏｋｉｎｄｓｏｆｄｅｖｉｃｅｓｗｅｒｅｔｈｅｎｆａｂｒｉｃａｔｅｄｏｎｔｈｅｓａｍｅｗａｆｅｒ．ＴｈｅｆｉｒｓｔｗｅｒｅＭＯＳ．ＨＥＭＴｓｗｉｔｈｔｈｅｇａｔｅｍｅｔａｌｏｎｔｏｐｏｆｔｈｅＡｌｚ０３ｌａｙｅｒａｎｄｔｈｅｓｅｃｏｎｄｗｅｒｅＨＥＭＴｓｗｉｔｈｔｈｅｇａｔｅｍｅｔａｌｄｉ．ｒｅｃｔｌｙｏｎｔｈｅＡＩＧａＮｂａｒｒｉｅｒｌａｙｅｒ．Ｔｈｅｇａｔｅｌｅｎｇｔｈｓ（Ｌｇ）ａｒｅｌｖｔｍｗｉｔｈａｇａｔｅｗｉｄｔｈ（Ｗｇ）ｏｆ１２０＃ｍ．Ｔｈｅｓｏｕｒｃｅ．ｔｏ—ｇａｔｅａｎｄｇａｔｅ．ｔｏ—ｄｒａｉｎｓｐａｃｅｓａｒｅｂｏｔｈ２ｕｒｎ．
３ＤＣａｎｄｍｉｃｒｏｗａｖｅｐｅｒｆｏｒｍａｎｃｅｓ
Ｆｉｇｕｒｅ２ｓｈｏｗｓｔｈｅＣ－Ｖｃｈａｒａｃｔｅｒｉｓｔｉｃｓａｔ１ＭＨｚｏｆｇａｔｅｃａｐａｃｉｔｏｒｓｗｉｔｈｂｏｔｈｔｈｅＭＯＳ－ＨＥＭＴａｎｄＨＥＭＴｓｔｒｕｃｔｕｒｅｓ．Ａｒｏｕｎｄｔｅｓｔｐａｔ．ｔｅｒｎｗｉｔｈｔｈｅａｒｅａｏｆＡ２兀×６３“ｍｘ６３ｕｒｎｗａｓｕｓｅｄｆｏｒｔｈｅＣ－Ｖｍｅａｓｕｒｅｍｅｎｔｓ．ＵｓｉｎｇｔｈｅＭＯＳ－ＨＥＭＴｃａｐａｃｉｔａｎｃｅｍｅａｓｕｒｅｍｅｎｔ．ｗｅｅｓｔｉｍａｔｅｔｈｅｕｐｐｅｒｌｉｍｉｔｏｎｓｕｒｆａｃｅｃｈａｒｇｅｄｅｎｓｉｔｙｉｎＡｌｚ０３ｌａｙ—ｅｒｔｏｂｅ咒。＝５×１０１１ｅｍ一２［１５］．Ｔｈｉｓｃｈａｒｇｅｄｅｎｓｉｔｙｉｓｔｗｏｏｒｄｅｒｓｏｆｍａｇｎｉｔｕｄｅｌｅｓｓｔｈａｎｔｈｅｓｈｅｅｔｃａｒ—ｒｉｅｒｄｅｎｓｉｔｙｉｎｔｈｅ２ＤｃｈａｎｎｅｌｏｆｔｈｅＭＯＳ．
Ｆｉｇ．２ＭｅａｓｕｒｅｄＣ－ＶｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＧａＮＭＯＳ－ＨＥＭＴａｎｄＨＥＭ
ＨＥＭＴ?ｔｈｅｒｅｂｙｉｎｄｉｃａｔｉｎｇａｈｉｇｈｑｕａｌｉｔｙｆｏｒｔｈｅＫ１２Ｏｚ｜心ＧａＮｉｎｔｅｒｆａｃｅ．Ｈｏｗｅｖｅｒ，ｔｈｅｉｎｔｅｒｆａｃｅｓｔａｔｅｄｅｎｓｉｔｙｉｓｓｅｖｅｒａｌｏｒｄｅｒｓｏｆｍａｇｎｉｔｕｄｅｈｉｇｈｅｒｔｈａｎｔｈａｔｏｆｔｈｅＳｉＭＯＳＦＥＴｓａｔｔｈｅｎｅａｒｌｙｐｅｒｆｅｃｔＳｉ０２／ｓｉｉｎｔｅｒｆａｃｅ．ＦｏｒｔｈｅＧａＮＭＯＳ．ＨＥＭＴｓｔｒｕｃｔｕｒｅ，ａｔｈｒｅｓｈｏｌｄｖｏｌｔａｇｅｓｈｉｆｔＡＶｔｈ＝０．５ＶｉｓｓｈｏｗｎｉｎＦｉｇ．２．Ｔｈｉｓｔｈｒｅｓｈｏｌｄｖｏｌｔａｇｅｓｈｉｆｔｃａｎｂｅａｔｔｒｉｂｕｔｅｄｔｏｔｈｅ
ｌａｒｇｅｒｄｉｓｔａｎｃｅｂｅｔｗｅｅｎｔｈｅｇａｔｅａｎｄｔｈｅｃｈａｎｎｅｌｏｒｔｈｅｉｎｔｅｒｆａｃｅｓｔａｔｅｓ，ｗｈｉｃｈｐａｒｔｉａｌｌｙｓｃｒｅｅｎｔｈｅｅｌｅｃｔｒｉｃｆｉｅｌｄｆｒｏｍｔｈｅｇａｔｅｅｌｅｃｔｒｏｄｅ，ｐｒｅｖｅｎｔｉｎｇｉｔｆｒｏｍｒｅａｃｈｉｎｇｔｈｅｃｈａｎ－ｎｅｌ．ＴｈｅｓｏｌｕｔｉｏｎｉｓｔｏｒｅｐｌａｃｅＡ１２０３ｇａｔｅｏｘｉｄｅｓｗｉｔｈａｍａｔｅｒｉａｌｈａｖｉｎｇｈｉｇｈｅｒｐｅｒｍｉｔｔｉｖｉｔｙ．Ｈｉｇｈ－ｋｉｎｓｕｌａｔｏｒｓｃａｎｂｅｇｒｏｗｎｐｈｙｓｉｃａｌｌｙｔｈｉｃｋｅｒｆｏｒｔｈｅｓａｍｅ（ｏｒｔｈｉｎｎｅｒ）ｅｑｕｉｖａｌｅｎｔｅｌｅｃｔｒｉｃａｌｏｘｉｄｅｔｈｉｃｋｎｅｓｓ（ＥｏＴ），ｔｈｕｓｏｆｆｅｒｉｎｇｓｉｇｎｉｆｉｃａｎｔｇａｔｅｌｅａｋａｇｅｒｅｄｕｃｔｉｏｎ．Ｏｎｔｈｅｏｔｈｅｒｈａｎｄ。ｔｈｅｓｕｒｆａｃｅｐｒｅｔｒｅａｔｍｅｎｔｉｓｒｅｑｕｉｒｅｄｔｏｉｍｐｒｏｖｅｔｈｅｉｎｔｅｒｆａｃｅｐｒｏｐｅｒｔｉｅｓｂｅｆｏｒｅｔｈｅｄｅｐｏｓｉｔｉｏｎｏｆＡ１２０３ｏｎＡＩ—ＧａＮ．ＴｈｅＡ１２０３ｔｈｉｃｋｎｅｓｓｄｏｘｉｓｅｓｔｉｍａｔｅｄｆｒｏｍｔｈｅｆｏｌｌｏｗｉｎｇｅｑｕａｔｉｏｎｓ：
】】】…
瓦：忑磊２一Ｃｏｘ＋瓦磊‘１）
Ｃ０ｘ＝ｅｏ￡ｏｘＡ／ｄｏｘ（２）
Ａ；７ｃ×６３×６３（ｕｍ２）（３）ｗｈｅｒｅＣＭ僻眦ｍ＝３９．９ｐＦｉｓｔｈｅｚｅｒｏ－ｂｉａｓｃａｐａｃｉ－ｔａｎｃｅｏｆｔｈｅＭＯＳ－ＨＥＭＴ．ＣＨＥＭＴ＝４３．６ｐＦｉｓｔｈｅｚｅｒｏ．ｂｉａｓｃａｐａｃｉｔａｎｃｅｏｆｔｈｅＨＥＭＴ，ｅｏｉｓｔｈｅｖａｃｕ．ａｍｐｅｒｍｉｔｔｉｖｉｔｙ，ｅｏｘｉｓｔｈｅｄｉｅｌｅｃｔｒｉｃｃｏｎｓｔａｎｔｏｆＡＬＤＡ１２０３，ａｎｄＡｉｓｔｈｅｃａｐａｃｉｔｏｒａｒｅａ．Ｔｈｅｃａ／－ｃｕｌａｔｅｄｏｘｉｄｅｔｈｉｃｋｎｅｓｓｏｆ２．４ｒｉｍｉｓｌｅｓｓｔｈａｎｔｈｅｄｅｓｉｇｎｖａｌｕｅｏｆ３．５ｎｍ．ＴｈａｔｉｓｐｒｏｂａｂｌｙｄｕｅｔｏｔｈｅｃｈｅｍｉｃａｌｃｌｅａｎｉｎｇｏｆｔｈｅＡ１２０３ｓｕｒｆａｃｅｂｅｆｏｒｅｔｈｅｇａｔｅｍｅｔａｌｄｅｐｏｓｉｔｉｏｎ．
Ｉｎ
Ｆｉｇ．３，ｔｈｅｇａｔｅｌｅａｋａｇｅｃｕｒｒｅｎｔｏｆｔｈｅＭｏＳ．ＨＥＭＴｉｓｇｅｎｅｒａｌｌｙｌｏｗｅｒｔｈａｎｔｈａｔｏｆ
ｔｈｅ
１６７６半导体学报第２８卷
Ａ１２０３
３．５ｎｍ
．８－６．．４－２０２
ｖ毋１６０１２０
Ｏ
Ｆｉｇ．３ＧａｔｅｌｅａｋａｇｅｃｕｒｒｅｎｔｆｏｒｔｈｅＭＯＳ－ＨＥＭＴａｎｄ
ｔｈｅＨＥＭＴＦｉｇ．５
ＤＣｔｒａｎｓｆｅｒｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆ１．０／ｔｍ×１２０ｐｍ
ＨＥＭＴ．Ｓｐｅｃｉｆｉｃａｌｌｙ．ｕｎｄｅｒａｎｅｇａｔｉｖｅｇａｔｅｂｉａｓＶ萨＝一２０Ｖ，ｔｈｅｇａｔｅｌｅａｋａｇｅｃｕｒｒｅｎｔｏｆｔｈｅ
ＭｏＳ—ＨＥＭＴｉｓａｐｐｒｏｘｉｍａｔｅｌｙｔｗｏｏｒｄｅｒｓｏｆｍａｇｎｉｔｕｄｅｌｏｗｅｒｔｈａｎｔｈａｔｏｆｔｈｅＨＥＭＴｗｉｔｈｓｉｍｉｌａｒｇａｔｅｄｉ．ｍｅｎｓｉｏｎｓ．Ｆｉｇｕｒｅ４ｓｈｏｗｓｔｈａｔｔｈｅ／－Ｖｃｈａｒａｃｔｅｒｉｓ—ｔｉｃｓｏｆｔｈｅＡ１ＧａＮ／ＧａＮＭＯＳ．ＨＥＭＴｗｉｔｈａｇａｔｅｌｅｎｇｔｈＬｇｏｆ１弘ｍａｎｄａｇａｔｅｗｉｄｔｈＷｇｏｆ１２０ｐｍａｒｅｗｅｌｌｂｅｈａｖｅｄｏｖｅｒａｄｒａｉｎｂｉａｓＶ出ｏｆ０～１０ＶａｎｄａｇａｔｅｂｉａｓＶ弘ｏｆ一５～３Ｖ．Ｔｈｅｐｉｎｃｈ—ｏｆｆｖｏｌｔａｇｅｉｓｃｏｎｓｉｓｔｅｎｔｌｙ一５Ｖ．ＴｈｅｄｒａｉｎｃｕｒｒｅｎｔｄｅｎｓｉｔｙｏｆｔｈｅＨＥＭＴｗｉｔｈｔｈｅｓａｍｅｄｉｍｅｎｓｉｏｎｓ，ｗｈｉｃｈｉｓｎｏｔｓｈｏｗｎｈｅｒｅ，ｉｓｌｉｍｉｔｅｄｔｏ６４０ｍＡ／ｍｍａｔＶ舒＝１ＶｂｅｃａｕｓｅｔｈｅＶ酗ｃａｎｎｏｔｂｅｂｉａｓｅｄａｔａｍｏｒｅｐｏｓｉｔｉｖｅｖｏｌｔａｇｅｄｕｅｔｏｔｈｅｌａｒｇｅｇａｔｅｌｅａｋ－ａｇｅｃｕｒｒｅｎｔ．Ｂｙｃｏｎｔｒａｓｔ，ｔｈｅｄｒａｉｎｃｕｒｒｅｎｔｄｅｎｓｉｔｙｏｆｔｈｅＭＯＳ．．ＨＥＭＴｉｓ７２０ｍＡ／ｍｍａｔａｈｉｇｈｐｏｓｉ．．ｔｉｖｅｇａｔｅｖｏｌｔａｇｅｏｆＶ铲＝３Ｖ．Ｔｈｅｃｏｍｂｉｎａｔｉｏｎｏｆｈｉｇｈｅｒｂｒｅａｋｄｏｗｎｖｏｌｔａｇｅａｎｄｈｉｇｈｅｒｄｒａｉｎｃｕｒ．ｒｅｎｔｉｍｐｌｙｔｈａｔｔｈｅｏｕｔｐｕｔｐｏｗｅｒｏｆｔｈｅＭＯＳ—ＨＥＭＴｃａｎｂｅｍｕｃｈｈｉｇｈｅｒｔｈａｎｔｈａｔｏｆｔｈｅ
ｖ０ｖ
Ｆｉｇ．４ＭｅａｓｕｒｅｄＩ?ｖｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆｔｈｅＭＯＳ－ＨＥＭＴ
ＡＩＧａＮ／ＧａＮＭｏｓ．ＨＥＭＴＯｌｌｓａｐｐｈｉｒｅｓｕｂｓｔｒａｔｅａｔａｄｒａｉｎｂｉａｓｏｆ７Ｖ
ＨＥＭＴ．ＵｓｉｎｇＪ出／Ｗｇ２ｅ？ｌ。ｖ。ｆａｎｄａｓａｔｕｒａｔｅｄｖｆａｔ＝５×１０６ｃｍ／ｓ．ｗｅｅｓｔｉｍａｔｅｔｈｅｍａｘｉｍｕｍｓｈｅｅｔｃａｒｒｉｅｒｄｅｎｓｉｔｙｔｏｂｅｎ。＝１．０×１０１３／ｃｍ２ａｓｅｘｐｅｃ．ｔｅｄｆｏｒａＡｌＧａＮ／ＧａＮｔｗｏ．ｄｉｍｅｎｓｉｏｎａｌｃｈａｎｎｅｌｄｅｎｓｉｔｙ．Ｎｏｎｏｔｉｃｅａｂｌｅ／－Ｖｈｙｓｔｅｒｅｓｉｓｉｓｏｂｓｅｒｖｅｄｉｎｔｈｅｄｒａｉｎｃｕｒｒｅｎｔｉｎｂｏｔｈｆｏｒｗａｒｄａｎｄｒｅｖｅｒｓｅｇａｔｅ－ｖｏｌｔａｇｅｓｗｅｅｐｄｉｒｅｃｔｉｏｎｓ．Ｔｈｉｓｉｎｄｉｃａｔｅｓｔｈａｔｎｏｓｉｇｎｉｆｉｃａｎｔｍｏｂｉｌｅｂｕｌｋｏｘｉｄｅｃｈａｒｇｅｉｓｐｒｅｓｅｎｔａｎｄｔｈａｔｄｅｎｓｉｔｙｏｆｔｈｅｌｏｗｉｎｔｅｒｆａｃｅｔｒａｐｓｉｓｌｏｗ．Ｆｉｇｕｒｅ５ｓｈｏｗｓｔｈｅｄｒａｉｎｃｕｒｒｅｎｔａｎｄｔｒａｎｓ—ｃｏｎｄｕｃｔａｎｃｅｏｆＡｌＧａＮ／ＧａＮＭＯＳ．ＨＥＭＴｗｉｔｈａｇａｔｅｌｅｎｇｔｈＬｇｏｆ１ｐｍａｎｄａｇａｔｅｗｉｄｔｈＷｇｏｆ１２０弘ｍ．ＡｓｃａｎｂｅｓｅｅｎｆｒｏｍＦｉｇ．５，ｔｈｅＭＯＳ．ＨＥＭＴｔｒａｎｓｃｏｎｄｕｃｔａｎｃｅｍｅａｓｕｒｅｄｆｏｒｔｈｅ１ｕｍｇａｔｅｌｅｎｇｔｈｄｅｖｉｃｅｉｓ１３０ｍＳ／ｒａｍ．Ｔｈｉｓｉｓｓｍａｌｌｅｒｔｈａｎ１４５ｍＳ／ｍｍｆｏｒｔｈｅＨＥＭＴｗｉｔｈｔｈｅｓａｍｅｄｅ．ｖｉｃｅｄｉｍｅｎｓｉｏｎｓ，ｗｈｉｃｈｉｓｎｏｔｓｈｏｗｎｈｅｒｅ．Ｔｈｉｓｄｅ．ｃｒｅａｓｅｉｓｃｏｎｓｉｓｔｅｎｔｗｉｔｈａｓｅｐａｒａｔｉｏｎｂｅｔｗｅｅｎｔｈｅＭｏＳ．ＨＥＭＴｃｈａｎｎｅｌａｎｄｔｈｅｇａｔｅｃｏｎｔａｃｔ．Ｔｈｅｉｎｃｒｅａｓｅｄｇａｔｅ．．ｔｏ．．ｃｈａｎｎｅｌｓｅｐａｒａｔｉｏｎｉｓａｌｓｏｒｅ．．ｓｐｏｎｓｉｂｌｅｆｏｒａｍｏｒｅｎｅｇａｔｉｖｅＭＯＳ．ＨＥＭＴｔｈｒｅｓｈ．ｏｌｄ
ｖｏｌｔａｇｅ．
ＴｈｅｍｉｃｒｏｗａｖｅｃｈａｒａｃｔｅｒｉｓｔｉｃｓｗｅｒｅｍｅａｓｕｒｅｄｏｎａｗａｆｅｒｕｓｉｎｇａｎＡｇｉｌｅｎｔＥ８３６３Ｂｎｅｔｗｏｒｋａｎａ．１ｙｚｅｒｉｎｔｈｅｒａｎｇｅｆｒｏｍ１０ＭＨｚｔｏ４０ＧＨｚ．Ｂｏｔｈ
ｓｈｏｒｔ—ｃｉｒｃｕｉｔｃｕｒｒｅｎｔｇａｉｎｈ
２１
ａｎｄｍａｘｉｍｕｍａｖａｉｌ．ａｂｌｅｐｏｗｅｒｇａｉｎＵｗｅｒｅｃａｌｃｕｌａｔｅｄｆｒｏｍｔｈｅｍｅａｓ—ｕｒｅｄＳ．ｐａｒａｍｅｔｅｒｓ，ｗｈｉｃｈｉｓｓｈｏｗｎｉｎＦｉｇ．６，ａｎｄｅｘｔｒａｐｏｌａｔｅｄａｔ——２０ｄＢ／ｄｅｃａｄｅｔｏｆｉｎｄｆＴａｎｄ，一，ｒｅｓｐｅｃｔｉｖｅｌｙ，ａｓｓｈｏｗｎｉｎＦｉｇ．７．Ｕｎｄｅｒｔｈｅｓｅｃｏｎｄｉｔｉｏｎｓ，ｔｈｅ１ｐｍｇａｔｅｌｅｎｇｔｈｄｅｖｉｃｅｓｈｏｗｓｆＴ＝１０．１ＧＨｚａｎｄ，。＝３０．８ＧＨｚａｔａｄｒａｉｎｂｉａｓｏｆ７Ｖａｎｄａｇａｔｅｂｉａｓｏｆ一３．１５Ｖ．ＣｏｍｐａｒｅｄｔｏｔｈｅｃｏｎｖｅｎｔｉｏｎａｌＡＩＧａＮ／ＧａＮＨＥＭＴｓｏｆＯ．８ｕｍｇａｔｅ
一基Ⅲ／∞ｇⅢ暑，室
一暑Ｅ、《暑一、ｐ，
第１１期ＨａｏＹｕｅｅｔａ１．：ＧａＮＭＯＳ－ＨＥＭＴＵｓｉｎｇＵｌｔｒａｔｈｉｎＡｌｚ０３Ｄｉｅｌｅｃｔｒｉｃｗｉｔｈ，ｍ，ｏｆ３０．８ＧＨｚ１６７７
Ｆｉｇ．６
ＭｅａｓｕｒｅｄＳ－ｐａｒａｍｅｔｅｒｓｖｅｒｓｕｓｆｒｅｑｕｅｎｃｙ
ｌｅｎｇｔｈ。ｗｈｉｃｈｅｘｈｉｂｉｔａｎｆＴｏｆ１０．７ＧＨｚＬｌ６１ｏｎｓａｐ．ｐｈｉｒｅｓｕｂｓｔｒａｔｅ，ａｎｄａｎ，Ｔｏｆ２０ＧＨｚａｎｄａｎ，二ｏｆ２８ＧＨｚＬｌ７。ｏｎ６Ｈ．ＳｉＣｓｕｂｓｔｒａｔｅ．ｅｑｕｉｖａｌｅｎｔｄｅｖｉｃｅｐｅｒｆｏｒｍａｎｃｅｉｓｏｂｔａｉｎｅｄ，ｅｘｈｉｂｉｔｉｎｇｔｈｅｓｕｐｅｒｉｏｒｉ．ｔｖｏｆｔｈｉｓＭＯＳ．ＨＥＭＴｄｅｖｉｃｅｓｔｒｕｃｔｕｒｅｗｉｔｈａｎＡＬＤＡ１２０３ｇａｔｅｄｉｅｌｅｃｔｒｉｃ．
４Ｃｏｎｃｌｕｓｉｏｎｓ
Ｉｎｓｕｍｍａｒｙ，ＡＬＤＡ１２０３ｗａｓｐｒｏｖｅｎｔｏｂｅａｎｅｘｃｅｌｌｅｎｔｇａｔｅｄｉｅｌｅｃｔｒｉｃｆｏｒＧａＮＭＯＳ．ＨＥＭＴｓ．
Ｗｅｈａｖｅｆａｂｒｉｃａｔｅｄ
ａ１／．ｔｍｇａｔｅｌｅｎｇｔｈＧａＮＭＯＳ．ＨＥＭＴｓｗｉｔｈａｎＡ１２０３ｇａｔｅｏｘｉｄｅｔｈｉｃｋｎｅｓｓｏｆ３．５ｎｍｗｈｉｃｈｅｘｈｉｂｉｔｓａｍａｘｉｍｕｍｔｒａｎｓｃｏｎｄｕｃｔ．ａｎｃｅｏｆ１３０ｍＳ／ｍｍａｎｄａｓｔｒｏｎｇａｃｃｕｍｕｌａｔｉｏｎｃｕｒｒｅｎｔｏｆ７２０ｍＡ／ｍｍａｔＶ擘＝３Ｖ．ＴｈｅｆＴａｎｄ，ｍｘｗｅｒｅｍｅａｓｕｒｅｄａｓ１０．１ａｎｄ３０．８ＧＨｚ，ｒｅｓｐｅｃ—ｔｉｖｅｌｙ．ＴｈｅｓｅｉｄｅａｌｃｈａｒａｃｔｅｆｉｓｔｉｃｓｉｍｐｌｙｔｈｅｈｕｇｅｐｏｔｅｎｔｉａｌｏｆｔｈｅＡＬＤ～２０３／舢ＧａＮ／ＧａＮＭＯＳ．ＨＥＭＴｆｏｒｈｉｇｈ—ｐｏｗｅｒＲＦａｐｐｌｉｃａｔｉｏｎｓ．
ｆ／ＧＨｚ
Ｆｉｇ．７Ｓｈｏｒｔ－ｃｉｒｃｕｉｔｃｕｒｒｅｎｔｇａｉｎｈｎａｎｄｕｎｉｌａｔｅｒａｌｐｏｗｅｒｇａｉｎＵｖｅｒｓｕｓｆｒｅｑｕｅｎｃｙｏｆ１．０ｐｍｘ１２０ｐｍＡＩ－ＧａＮ／ＧａＮＭＯＳ－ＨＥＭＴｏｎｓａｐｐｈｉｒｅｓｕｂｓｔｒａｔｅＤｅｖｉｃｅｉｓｂｉａｓｅｄａｔＶｄ，２＋７ＶａｎｄＶｓ，＝一３．１５Ｖ．Ｒｅｆｅｒｅｎｃｅｓ
［１］ＭａｅｄａＮ，ＳａｉｔｏｈＴ，ＴｓｕｂａｋｉＫ，ｅｔａ１．Ｓｕｐｅｒｉｏｒｐｉｎｃｈ—ｏｆｆｃｈａｒ．ａｃｔｅｒｉｓｔｉｃｓａｔ４００℃ｉｎＡＩＧａＮ／ＧａＮｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅｆｉｃｌｄ
ｅｆｆｅｃｔｔｒａｎｓｉｓｔｏｒｓ．ＪｐｎＪＡｐｐｌＰｈｙｓ，１９９９，３８（２）：９８７
［２］ＫｈａｎＭＡ，ＳｈｕｒＭｓ，ＣｈｅｎＱＣ，ｅｔａ１．Ｃｕｒｒｅｎｔ．ｖｏｌｔａｇｅｃｈａｒ．ａｅｔｅｒｉｓｔｉｃｃｏＨａｐｓｅｉｎＡＩＧａＮ／ＧａＮｈｅｔｅｒｏｓｔｒｕｃｍｒｅｉｎｓｕｌａｔｅｄ
ｇａｔｅｆｉｅｌｄｅｆｆｅｃｔｔｒａｎｓｉｓｔｏｒｓａｔｈｉｇｈｄｒａｉｎｂｉａｓ．ＥｌｅｃｔｒｏｎＬｅｔｔ，
１９９４，３０（１５）：２１７５
［３］ＢｉｎａｒｉＳＣ，ＲｏｗｌａｎｄＬＢ，ＫｅｌｎｅｒＧ，ｅｔａ１．ＤＣ，ｍｉｃｒｏｗａｖｅ，ａｎｄｈｉｇｈ—ｔｅｍｐｅｒａｔｕｒｅｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＧａＮＦＥＴｓｔｒｕｅ—
ｔｕｆｔｓ．ＩｎｔｅｒｎａｔｉｏｎａｌＳｙｍｐｏｓｉｕｍＣｏｍｐｏｕｎｄＳｅｍｉｃｏｎｄｕｃｔｏｒｓ，
１９９５：４５９
［４］ＲｅｎＦ，ＨｏｎｇＭ，ＣｈｕＳＮＧ，ｅｔａ１．ＥｆｆｅｃｔｏｆｔｅｍｐｅｒａｔｕｒｅｏｎＧａ２０ａ（Ｇｄ２０３）／ＯａＮｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒｆｉｅＩｄｅｆｆｅｃｔ
ｔｒａｎｓｉｓｔｏｒ．ＡｐｐｌＰｈｙｓＬｅｔｔ，１９９８，７３（２９）：３８９３
［５］ＫｈａｎＭＡ，ＨｕＸ，ＳｕｍｉｎＧ，ｅｔａ１．ＡＩＧａＮ／ＧａＮｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅｆｉｅｌｄｅｆｆｅｃｔｔｒａｎｓｉｓｔｏｒ．ＩＥＥＥ
ＥｌｅｃｔｒｏｎＤｅｖｉｃｅＬｃｔｔ，２０００，２１（１）：６３
［６］ＫｈａｎＭＡ，ＨｕＸ，ＴａｒａｋｊｉＡ，ｅｔａ１．ＡＩＧａＮ／ＧａＮｍｅｔａｌ—ｏｘｉｄｅ－ｓｅｍｉｃｏｎｄｕｃｔｏｒｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅｆｉｅｌｄ－ｅｆｆｅｃｔｔｒａｎｓｉｓｔｏｒｓｏｎＳｉＣ
ｓｕｂｓｔｒａｔｅｓ．ＡｐｐｌＰｈｙｓＬｅｔｔ，２０００，７７（９）：１３３９
［７］ＳｉｍｏｎＧ，ＨｕＸ。ＩｌｉｎｓｋａｙａＮ，ｅｔａ１．ＡｌＧａＮ／ＩｎＧａＮ／ＧａＮｄｏｕｂｌｅｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅｆｉｅｌｄ－ｅｆｆｅｃｔｔｒａｎｓｉｓｔｏｒ．ＥｌｅｃｔｒｏｎＬｃｔｔ，
２０００，３６（８）１２０４３
［８］ＫｏｕｄｙｍｏｖＡ。ＨｕＸ，ＳｉｍｉｎＫ，ｅｔａ１．ＰｒｏｔｏｎｉｒｒａｄｉａｔｉｏｎｏｆＭｒＳｏｒＳｃ２０３ｐａｓｓｉｖａｔｅｄＡＩＧａＮ／ＧａＮｈｉｇｈｅｌｅｃｔｒｏｎｍｏｂｉｌｉ?
ｔｙ
ｔｒａｎｓｉｓｔｏｒｓ．ＩＥＥＥＥｌｅｃｔｒｏｎＤｅｖｉｃｅＬｅｔｔ，２００２，２３（３）：４４９［９］ＳｉｍｉｎＧ，ＫｏｕｄｙｍｏｖＡ，ＦａｔｉｍａＨ，ｅｔａ１．ＳｉＯｚ／ＡＩＧａＮ／Ｉｎ－ＧａＮ／ＧａＮＭｏｓＤＨＦＥＴｓ．ＩＥＥＥＥｌｅｃｔｒｏｎＤｅｖｉｃｅＬｃｔｔ，２００２。
２３（８）：４５８
［１０３ＳｉｍｏｎＧ?ＸＨｕ，ｌｌｉｎｓｋａｙａＮ，ｅｔａ１．Ｌａｒｇｅｐｅｒｉｐｈｅｒｙｈｉｇｈ－ｐｏｗｅｒＡＩＧａＮ／ＧａＮｍｅｔａｌ－ｏｘｉｄｅ－ｓｅｍｉｃｏｎｄｕｃｔｏｒｈｅｔｅｒｏｓｔｒｕｃ．．
ｔｕｒｅｆｉｅｌｄｅｆｆｅｃｔｔｒａｎｓｉｓｔｏｒｓｏｎＳｉＣｗｉｔｈｏｘｉｄｅ－ｂｒｉｄｇｉｎｇ．ＩＥＥＥ
ＥｌｅｃｔｒｏｎＤｅｖｉｃｅＬｅｔｔ，２００１，２２（２）１５３
［１１３Ｈｕｘ，ＫｏｕｄｙｍｏｖＡ，ＳｉｍｏｎＧ，ｅｔａ１．ＳｈＮ４／ＡＩＧａＮ／ＧａＮ．ｍｅｔａｌ－ｉｎｓｕｌａｔｏｒ．ｓｅｍｉｃｏｎｄｕｃｔｏｒｈｅｔｅｒＯｓｔｒｕｃｔｕｒｅｆｉｅｌｄ－ｅｆｆｅｃｔ
ｔｒａｎｓｉｓｔｏｒｓ．ＡｐｐｌＰｈｙｓＬｅｔｔ，２００１，７９（１７）：２８３２
［１２］ＨａｓｈｉｚｕｍｅＴ，ＯｏｔｏｍｏＳ，ＨａｓｅｇａｗａＨ．Ｓｕｐｐｒｅｓｓｉｏｎｏｆｃｕｒ－ｒｅｎｔｃｏｌｌａｐｓｅｉｎｉｎｓｕｌａｔｅｄｇａｔｅＡＩＧａＮ／ＯａＮｈｅｔｅｒｏｓｔｍｃｔｕｒｅ
ｆｉｅｌｄ?ｅｆｆｅｃｔｔｒａｎｓｉｓｔｏｒｓｕｓｉｎｇｕｈｒａｔｈｉｎＡｈ０３ｄｉｅｌｅｃｔｒｉｃ．Ａｐｐｌ
ＰｈｙｓＬｃｔｔ，２００３，８３（１４）：２９５２
［１３］ＭｅｈａｎｄｒｕＲ，ＬｕｏＢ，ＫｉｍＪ，ｅｔａ１．Ａ１ＧａＮ／ＧａＮｍｅｔａｌ－ｏｘｉｄｅ－ｓｅｍｉｃｏｎｄｕｃｔｏｒｈｉｇｈｅｌｅｃｔｒｏｎｍｏｂｉｌｉｔｙｔｒａｎｓｉｓｔｏｒｓｕｓｉｎｇＳｅｚｔｈ
ａｓｔｈｅｇａｔｅｏｘｉｄｅａｎｄｓｕｒｆａｃｅｐａｓｓｉｖａｔｉｏｎ．ＡｐｐｌＰｈｙｓＬｅｔｔ，
２００３，８２（１５）：２５３０
［１４］ＨａｓｚＢ，ＧｕｏＴＹ，ＺｈａｎｇＬＣ，ｅｔａ１．ＡＩＧａＮ／ＧａＮＨＥＭＴｓｗｉｔｈａｎｉｎｓｕｌａｔｅｄｇａｔｅｆａｂｒｉｃａｔｅｄｂｙｉｎｄｕｃｔｉｖｅｌｙＣＯＵｐｌｅｄ．ｐｌａｓ－
ｍａｏｘｉｄｉｚａｔｉｏｎ．Ｃｈｉｎ
ＰｈｙｓＬｅｔｔ，２００６，２３（２）：４９７
［１５］ＹｕｅＹｚ，ＨａｓＹ，ＦｅｎｇＱ，ｅｔｅＬＩ．ＧａＮＭＯＳ－ＨＥＭＴｕｓｉｎｇｕｌ—ｔｒａｔｈｉｎＡ１２：０３
ｄｉｅｌｅｃｔｒｉｃ
ｇｒｏｗｎｂｙａｔｏｍｉｃｌａｙｅｒｄｅｐｏｓｉｔｉｏｎ．ＣｈｉｎＰｈｙｓＬｅｔｔ，２００７，２４（８）：２４１９
［１６３ＣｈｅｎＸＪ，ＬｉｕｘＹ，ＨｅＺＪ，ｅｔａ１．１０ｘ７５ｐｍｘ０．８ｐｍＡＩ－ＧａＮ／ＧａＮｐｏｗｅｒｄｅｖｉｃｅｓｏｎｓａｐｐｈｉｒｅｓｕｂｓｔｒａｔｅｗｉｔｈｏｕｔｐｕｔ
ｐｏｗｅｒｄｅｎｓｉｔｙｏｆ２．４Ｗ／ｍｍａｔ４ＧＨｚ．ＣｈｉｎｅｓｅＪｏｕｒｎａｌｏｆ
Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ，２００５，２６（９）｛１８０４（ｉｎＣｈｉｎｅｓｅ）［陈晓娟。刘
新宇，和致经，等．ｃ波段０．７５ｍｍＡＩＧａＮ／ＧａＮ功率器件．半
导体学报，２００５，２６（９）：１８０４３
∞署一—ｏ
１６７．８半导体学报第２８卷
［１７］ＬｕｏＷＪ，ＣｈｅｎＸＪ，ＬｉＣｚ。ｅｔａ１．Ｆａｂｒｉｃａｔｉｏｎｏｆａｈｉｇｈ—ｐｅｒ．ｆｏｒｍａｎｃｅｌｍｍＡＩＧａＮ／ＧａＮＨＥＭＴｏｎＳｉＣｓｕｂｓｔｒａｔｅ．Ｃｈｉ．
ｎｅｓｃＪｏｕｒｎａｌｏｆＳｅｍｉｃｏｎｄｕｃｔｏｒｓ，２００６，２７（１１）：１９８１（ｉｎＣｈｉ．ｎｃｓｅ）［罗卫军，陈晓娟，李成瞻，等．高性能１ｒａｍＳｉＣ基Ａ１．ＧａＮ／ＧａＮ功率ＨＥＭＴ研制．半导体学报，２００６，２７（１１）；１９８１］
，一为３０．８ＧＨｚ的超薄Ａ１２０３绝缘栅ＧａＮＭＯＳ－ＨＥＭＴ器件。
郝跃’岳远征冯倩张进城马晓华倪金玉
（西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，西安７１００７１）
摘要：报道了一种利用原子层淀积（ＡＬＤ）生长超薄（３．５ｎｍ）虬０３为栅介质的高性能ＡＩＧａＮ／ＧａＮ金属氧化物半导体高电子迁移率晶体管（ＭＯＳ－ＨＥＭＴ）．新型ＡＩＧａＮ／ＧａＮＭＯＳ－ＨＥＭＴ器件栅长１ｐｍ，栅宽１２０ｐｍ，栅压为＋３．ＯＶ时最大饱和输出电流达到７２０ｍＡ／ｍｍ，最大跨导达到１３０ｍＳ／ｒａｍ，开启电压保持在一５．ＯＶ，特征频率和最高振荡频率分别为１０．１和３０．８ＧＨｚ．
关键词：ＡＩＧａＮ／ＧａＮ；ＭＯＳ－ＨＥＭＴ；超薄～２０３．
ＥＥＡＣＣ：２５６０ＰＡＣＣ：７３６０
中图分类号：ＴＮ３８６文献标识码：Ａ文章编号：０２５３．４１７７（２００７）１１．１６７４．０５
＊国家重点基础研究发展计划资助项目（批准号：５１３２７０２０３０１）
ｔ通信作者．Ｅｍａｉｌ：ｙｈａｏ（园ｘｉｄｉａｎ．ｅｄｕ．ｃｎ
．
２００７—０５－２３收到，２００７—０７—０２定稿＠２００７中国电子学会
fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件
作者：郝跃， 岳远征， 冯倩， 张进城， 马晓华， 倪金玉， Hao Yue， Yue Yuanzheng，Feng Qian， Zhang Jincheng， Ma Xiaohua， Ni Jinyu
作者单位：西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,西安,710071
刊名：
半导体学报
英文刊名：CHINESE JOURNAL OF SEMICONDUCTORS
年，卷(期)：2007，28(11)
引用次数：2次
参考文献(17条)
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transistors on SiC substrates 2000(9)
7.Simon G.Hu X.Ilinskaya N AlGaN/InGaN/GaN double heterostructure field-effect transistor 2000(8)
8.Koudymov A.Hu X.Simin K Proton irradiation of MgO or Sc2O3 passivated AlGaN/GaN high electron mobility transistors 2002(3)
9.Simin G.Koudymov A.Fatima H SiO2/AlGaN/InGaN/GaN MOSDHFETs 2002(8)
10.Simon G.X Hu.Ilinskaya N Large periphery highpower AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging 2001(2)
11.Hu x.Koudymov A.Simon G Si3N4/AlGaN/GaNmetal-insulator-semiconductor heterostructure field-effect transistors 2001(17)
12.Hashizume T.Ootomo S.Hasegawa H Suppression of current collapse in insulated gate AlGaN/GaN heternstructure field-effect transistors using ultrathin Al2O3 dielectric 2003(14)
13.Mehandru R.Luo B.Kim J AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation 2003(15)
14.HAO Zhi-Biao.GUO Tian-Yi.ZHANG Li-Chong.LUO Yi AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization[期刊论文]-中国物理快报（英文版） 2006(2)
15.YUE Yuan-Zheng.HAO Yue.FENG Qian.ZHANG Jin-Cheng.MA Xiao-Hua.NI Jin-Yu GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition[期刊论文]-中国物理快报(英文版) 2007(8)
16.C波段0.75mm AlGaN/GaN功率器件[期刊论文]-半导体学报 2005(9)
17.罗卫军.陈晓娟.李成瞻.刘新宇.和致经.魏珂.梁晓新.王晓亮高性能1mm SiC基AlGaN/GaN功率HEMT研制[期刊论
文]-半导体学报 2006(11)
相似文献(10条)
1.外文期刊B. Luo.R. Mehandru.Jihyun Kim.F. Ren.B.P. Gila.A.H. Onstine.C.R. Abernathy.S.J. Pearton.
D. Gotthold.R. Birkhahn.B. Peres.R.C. Fitch.N. Moser.J.K. Gillespie.G.H. Jessen.T.J. Jenkins.M.J. Yannuzi.G.D. Via.A. Crespo Improved dc and power performance of AlGaN/GaN high electron mobility
transistors with Sc_2O_3 gate dielectric or surface passivation
The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc_2O_3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (～0.75 A/mm) andsignificantly better power-added efficiency (PAE, 27%) relative to the HEMT (～0.6 A/mm and ～5%). The Sc_2O_3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltagein passivated devices relative to unpassivated devices. The PAE also increases (from ～5% to 12%) on the surface passivated HEMTs, showing that Sc_2O_3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.
2.外文期刊S. Arulkumaran.T. Egawa.H. Ishikawa.T. Jimbo Studies of electron beam evaporated
SiO{sub}2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
The metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) have been demonstrated on sapphire substrates, and the dc characteristics of the fabricated devices were examined. The electron beam (EB) evaporated SiO{sub}2 oxide layers were used as a gate-insulator. The fabricated MOS-HEMTs have exhibited superior dc characteristics when compared with the conventional AlGaN/GaN HEMTs. The MOS-HEMTs could operate at positive gate-biases as high as +4.0 V. The MOS-HEMTs exhibited highdrain current at 856 mA/mm. The extrinsic transconductance of 144 mS/mm has been found in 1.7μm-gate-length EB-SiO{sub}2 MOS-HEMTs. The gate leakage current was three orders of magnitude smaller than that of the conventional AlGaN/GaN HEMTs. The stable device operations at high gate voltages indicate that the trap density at the interface between the EB-SiO{sub}2 and AlGaN/GaN heterostructure will be low.
3.外文期刊S. Arulkumaran.T. Egawa.H. Ishikawa.T. Jimbo Studies of electron beam evaporated
SiO{sub}2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrate
The metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) have been demonstrated on sapphire substrates, and the dc characteristics of the fabricated devices were examined. The electron beam (EB) evaporated SiO{sub}2 oxide layers were used as a gate-insulator. The fabricated MOS-HEMTs have exhibited superior dc characteristics when compared with the conventional AlGaN/GaN HEMTs. The MOS-HEMTs could operate at positive gate-biases as high as +4.0 V. The MOS-HEMTs exhibited highdrain current at 856 mA/mm. The extrinsic transconductance of 144 mS/mm has been found in 1.7μm-gate-length EB-SiO{sub}2 MOS-HEMTs. The gate leakage current was three orders of magnitude smaller than that of the conventional AlGaN/GaN HEMTs. The stable device operations at high gate voltages indicate that the trap density at the interface between the EB-SiO{sub}2 and AlGaN/GaN heterostructure will be low.
4.外文期刊Yuanzheng Yue.Yue Hao.Jincheng Zhang.Jinyu Ni.Wei Mao.Qian Feng.Linjie Liu AlGaN/GaN MOS-
HEMT With Dielectric and Interfacial Passivation Layer Grown by Atomic Layer Deposition
We have developed a novel AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor using a stack gate HfO structure grown by atomic layer deposition. The stack gate consists of a thin HfO (30-A) gate dielectric and a thin Al (20- A) interfacial passivation layer (IPL). For the 50-A stack gate, no measurable hysteresis and a smaller threshold voltage shift were observed, indicating that a high-quality interface can be achieved using a Al IPL on an AlGaN substrate. Good surface passivation effects of the Al IPL have also been confirmed by pulsed gate measurements. Devices with 1- mum gate lengths exhibit a cutoff frequency of 12 GHz and a maximum frequency of oscillation of 34 GHz, as well as a maximum drain current of 800 mA/mm and a peak transconductance of 150 mS/mm, whereas the gate leakage current is at least six orders of magnitude lower than that of the reference high-electron mobility transistors at a positive gate bias.
5.外文会议Yuan-Zheng Yue.Yue Hao.Jin-Cheng Zhang AlGaN/GaN MOS-HEMT with Stack Gate
HfO{sub}2/Al{sub}2O{sub}3 Structure Grown by Atomic Layer Deposition
We have developed a novel AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using stack gate
HfO{sub}2/Al{sub}2O{sub}3 structure grown by atomic layer deposition (ALD). The stack gate consists of a thin HfO{sub}2 (30A) gate dielectric and a thin Al{sub}2O{sub}3 (20A) interfacial passivation layer (IPL). For the 50A stack gate, no measurable C-V hysteresis and smaller threshold voltage shift were observed, indicating that a high quality interface can be achieved using a Al{sub}2O{sub}3 IPL on AlGaN substrate. Good surface passivation effects of the Al{sub}2O{sub}3 IPL have also been confirmed by pulsed gate measurements. Devices with 1-μm gate lengths exhibit a cutoff frequency (f{sub}T) of 12GHz and a maximum frequency of oscillation
(f{sub}(MAX)) of 34GHz. The gate leakage current is at least six orders of magnitude lower than that of the reference HEMTs at positive gate bias.
6.外文期刊Yue. Y..Hao. Y..Zhang. J..Ni. J..Mao. W..Feng. Q..Liu. L.AlGaN/GaN MOS-HEMT With
Interfacial Passivation Layer Grown by At
We have developed a novel AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistor using a stack gate
7.会议论文Hongwei Chen.Jinyan Wang.Chuan Xu.Min Yu.Yang Fu.Zhihua Dong.Fujun Xu.Yilong Hao.Cheng
P.Wen Enhanced device performance of AlGaN/GaN HEMTs using thermal ozidation of electron-beam
deposited Aluminum for gate ozide2008
We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobilitytransistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple,and less expensive than electron cyclotron resonance (ECR) plasma oxidation of Al or atomic layer deposited (ALD) Al2O3. The X-ray Photoelectron Spectroscopy (XPS) Ols spectrum showed that the Al2O3 with a bandgap of 7.8 eV was obtained in this specimen. The resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage,larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor (HEMT) of similar design. The MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power,high-frequency and high-temperature applications.
8.外文会议Hongwei Chen.Jinyan Wang.Chuan Xu.Min Yu.Yang Fu.Zhihua Dong.Fujun Xu.Yilong Hao.Wen.
Cheng P..ICSICT Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-
beam deposited aluminum for gate oxide
We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple, and less expensive than electron cyclotron resonance (ECR) plasma oxidation of Al or atomic layer deposited (ALD) Al
this specimen. The resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage, larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor (HEMT) of similar design. The MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.
9.外文期刊Yue. YZ.Hao. Y.Feng. Q.Zhang. JC.Ma. XH.Ni. JY GaN MOS-HEMT using ultra-thin Al2O3
dielectric grown by atomic layer deposition
We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process, the device with maximum transconductance of 150 mS/mm is produced and discussed in comparision with the result of 100 mS/mm of Ye et al. The corresponding drain current density in the 0.8-mu m-gate-length MOS-HEMT is 800 mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT. The excellent characteristics of this novel mos-hemt device structure with ALD Al2O3 gate dielectric are presented.
10.外文会议P. D. Ye.B. Yang.K. K. Ng.J. Bude.G. D. Wilk.S. Haider.J. C. M. Hwang GaN MOS-HEMT USING
ATOMIC LAYER DEPOSITION Al{sub}2O{sub}3 AS GATE DIELECTRIC AND SURFACE PASSIVATION
We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD)
Al{sub}2O{sub}3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of the same design, six order of magnitude smaller gate leakage current and tripled drain current at forward gate bias demonstrate the effectiveness of ALD Al{sub}2O{sub}3 as a gate dielectric. The high transconductance and high effective two-dimensional electron mobility verify the high-quality of Al{sub}2O{sub}3/AlGaN interface with low interface trap density. The Al{sub}2O{sub}3 passivation effect is also studied by sheet resistance measurement and short pulse drain characterization.
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1.Peng Kun.Wang Biao.Xiao Deyuan.Qiu Shengfen.Lin D C.Wu Ping.Yang S F TDDB improvement by optimized
processes on metal-insulator-silicon capacitors with atomic layer deposition of Al2O3 and multi
layers of TiN film structure[期刊论文]-半导体学报 2009(8)
2.王冲.岳远征.马晓华.郝跃.冯倩.张进城MOS AlGaN/GaN HEMT研制与特性分析[期刊论文]-半导体学报 2008(8)
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