Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS TYP.MAX.UNIT V CESM Collector-emitter voltage peak value V BE = 0 V
-1000V V CBO Collector-Base voltage (open emitter)-1000V V CEO Collector-emitter voltage (open base)-450V I C Collector current (DC)
-5A I CM Collector current peak value -10A P tot Total power dissipation
T hs ≤ 25 ?C
-32W V CEsat Collector-emitter saturation voltage - 1.5V I Csat Collector saturation current 3.5-A t f
Fall time
I Csat =2.5A,I B1=0.5A,I B2=0.8A
145
160
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOL PARAMETER
CONDITIONS MIN.MAX.UNIT V CESM Collector to emitter voltage
V BE = 0 V
-1000V V CEO Collector to emitter voltage (open base)-450V V CBO Collector to base voltage (open emitter)-1000V I C Collector current (DC)
-5A I CM Collector current peak value -10A I B Base current (DC)
-2A I BM Base current peak value -4A P tot Total power dissipation T hs ≤ 25 ?C
-32W T stg Storage temperature -65150?C T j
Junction temperature
-150
?C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS
TYP.MAX.UNIT R th j-hs Junction to heatsink with heatsink compound - 3.95K/W R th j-a
Junction to ambient
in free air
55
-K/W
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ?C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
MIN.TYP.
MAX.UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal -2500V three terminals to external waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz -10-pF
heatsink
STATIC CHARACTERISTICS
T hs = 25 ?C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
MIN.TYP.MAX.UNIT I CES Collector cut-off current 1
V BE = 0 V; V CE = V CESMmax -- 1.0mA I CES V BE = 0 V; V CE = V CESMmax ;-- 2.0mA T j = 125 ?C
I EBO
Emitter cut-off current V EB = 9 V; I C = 0 A --10mA V CEOsust Collector-emitter sustaining voltage I B = 0 A; I C = 100 mA;
450--V L = 25 mH
V CEsat Collector-emitter saturation voltages I C = 3.0 A; I B = 0.6 A -0.25 1.5V V BEsat Base-emitter saturation voltage I C = 2.5 A; I B = 0.33 A -- 1.3V
h FE DC current gain I C = 5 mA; V CE = 5 V
102235h FE I C = 500 mA; V CE = 5 V
142535h FEsat I C = 2.5 A; V CE = 5 V 1013.517h FEsat
I C = 3.5 A; V CE = 5 V
8
10
12
DYNAMIC CHARACTERISTICS
T hs = 25 ?C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
TYP.MAX.UNIT Switching times (resistive load)I Csat = 2.5 A; I B1 = -I B2 = 0.5 A;R L = 75 ohms; V BB2 = 4 V;
t on Turn-on time
0.50.7μs t s Turn-off storage time 3.34μs t f Turn-off fall time
0.330.45μs Switching times (inductive load)I Csat = 2.5 A; I B1 = 0.5 A; L B = 1 μH;-V BB = 5 V
t s Turn-off storage time 1.4 1.6μs t f Turn-off fall time
145160ns Switching times (inductive load)I Csat = 2.5 A; I B1 = 0.5 A; L B = 1 μH;-V BB = 5 V; T j = 100 ?C
t s Turn-off storage time 1.7 1.9μs t f
Turn-off fall time
160
200
ns
1 Measured with half sine-wave voltage (curve tracer).
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
Fig.14. Reverse bias safe operating area. T j ≤ T j max
02004006008001,0001,200
1
2
3
4
5
6
7
8
9
10
11
VCE CLAMP/V
IC/V
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
MECHANICAL DATA
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information
Where application information is given, it is advisory and does not form part of the specification.
? Philips Electronics N.V. 1998
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LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.