FEATURES
?VERY LOW NOISE FIGURE:0.45 dB Typical at 12 GHz ?HIGH ASSOCIATED GAIN:12.5 dB Typical at 12 GHz ?L G ≤ 0.20 μm, W G = 200 μm
?LOW COST METAL CERAMIC PACKAGE ?TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed,metal/ceramic package and is intended for high volume con-sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
PART NUMBER
NE32584C
PACKAGE OUTLINE
84C SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN
TYP MAX NF 1Optimum Noise Figure, V DS = 2 V, I DS = 10 mA, f = 12 GHz dB 0.450.55
G A 1Associated Gain, V DS = 2 V, I DS = 10 mA, f = 12 GHz dB 11.012.5I DSS Saturated Drain Current, V DS = 2 V,V GS = 0 V mA 206090V P Pinch-off Voltage, V DS = 2 V, I DS = 100 μA V -2.0-0.7-0.2g m Transconductance, V DS = 2 V, I D = 10 mA mS 4560I GSO Gate to Source Leakage Current, V GS = -3 V μA 0.510.0R TH (CH-A)Thermal Resistance (Channel to Ambient)°C/W 750
R TH (CH-C)
Thermal Resistance (Channel to Case)
°C/W
350A s s o c i a t e d G a i n , G A (d B )
N o i s e F i g u r e , N F (d B )
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY V DS = 2 V, I DS = 10 mA
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
Frequency, f (GHz)
California Eastern Laboratories
G A
NF
1.2
1.00.8
0.60.4
0.2
02
4
6
8
10
20
30
24
21
18
15
12
9
6
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NE32584C
ABSOLUTE MAXIMUM RATINGS 1 (T A = 25°C)
TYPICAL NOISE PARAMETERS (T A = 25°C)
V DS = 2 V, I D = 10 mA SYMBOLS
PARAMETERS UNITS RATINGS
V DS Drain to Source Voltage V 4.0V GS Gate to Source Voltage V -3.0I DS Drain Current mA I DSS I GRF Gate Current
μA 100T CH Channel Temperature °C 150T STG Storage Temperature °C -65 to +150
P T
Total Power Dissipation
mW
165
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature, T A (°C)T o t a l P o w e r D i s s i p a
t i o n , P T (m W )
N o i s e F i g u r e , N F (d B )
TYPICAL PERFORMANCE CURVES (T A = 25°C)
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
N o
i s e F i g u r e , N F (d B )
FREQ.NF OPT G A ΓOPT (GHz)(dB)(dB)MAG ANG Rn/5020.2920.00.86220.2740.3018.30.76450.2560.3316.50.69700.1880.3615.00.63960.11100.4013.60.591220.08120.4512.50.541470.04140.5412.00.481710.04160.6811.80.40-1650.0518
0.85
11.5
0.31
-144
0.06
A s s o c i a t e d G a i n , G A (d
B )
A s s o c i a t e d G a i n , G A (d
B )
D r a i n C u r r e n t , I D (m A )
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
Drain Current, I D (mA)
Frequency, f (GHz)NOISE FIGURE AND ASSOCIATED GAIN
DRAIN CURRENT vs.
Drain to Source Voltage, V DS (V)
200
150
100
50
50100150200
100
80
60
40
20
1.0
0.5
01
2
4
6
810
14
20
30
24
20
16
12
8
4
G A
NF
V DS = 2 V I D = 10 mA
2.01.51.00.5
0102030
14
13
12
1110
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TYPICAL COMMON SOURCE SCATTERING PARAMETERS (T A = 25°C)
NE32584C
V DS = 2 V, I DS = 10 mA
FREQUENCY S 11
S 21
S 12
S 22
K MAG (GHz)MAG ANG MAG ANG MAG ANG MAG ANG (dB)0.100 1.001 -1.75 5.202178.07 0.001 83.900.587 -1.59-0.07537.1620.200 1.001 -3.60 5.189176.330.00386.020.585 -3.13-0.02532.3800.5000.998-8.95 5.178170.780.00883.300.585 -7.500.04728.1111.0000.989-17.72 5.128161.980.01576.850.581 -14.910.11825.3392.0000.967-34.63 5.013145.120.03064.620.576-28.900.18822.2303.0000.943-50.81 4.865128.820.04353.33 0.567 -42.280.23520.536 4.0000.907 -66.71 4.703 112.710.05442.060.554 -55.030.31219.400 5.0000.857 -81.86 4.49397.040.06231.400.531 -66.770.42618.6016.0000.800-96.39 4.297 82.710.06921.970.503-77.550.54117.9437.0000.755-110.25 4.14369.200.075
13.520.483-87.720.61817.4238.0000.725 -124.55 4.068 55.99 0.081 5.090.470 -97.810.64617.0099.0000.683-138.37 3.99442.580.084-3.800.453-106.930.72416.77110.0000.663-154.60 4.017 28.11 0.089-12.630.431-116.850.73416.54511.5000.585178.24 3.849 6.850.091-26.790.359-134.350.90016.26312.0000.565168.24
3.790 -0.460.090-31.630.335-140.870.96016.24413.0000.551148.32 3.720 -13.970.090 -41.140.300 -157.16 1.00016.1631
4.0000.548129.66 3.669 -28.930.089-52.520.281-173.11 1.0291
5.11315.000 0.560112.17 3.652-44.370.087 -64.180.276171.08 1.02515.2531
6.0000.56594.50 3.557 -60.11 0.085-76.050.274154.07 1.05214.8241
7.000 0.565 76.97 3.448 -74.93 0.084-89.050.259135.78 1.10114.1961
8.0000.575
60.33
3.357
-89.44
0.082
-103.35
0.263
116.62
1.120
14.012
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Coordinates in Ohms Frequency in GHz (V DS = 2 V, I DS NE32584C
MAG =
|S 21||S 12|
K - 1 ).2(K ±
? = S 11 S 22 - S 21 S 12
When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S 21||S 12|, K = 1 + | ? | - |S 11| - |S 22|2222 |S 12 S 21|
,0
j -j ±0?
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NE32584C
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (T A = 25°C)
FREQUENCY S 11
S 21
S 12
S 22
K MAG (GHz)MAG ANG MAG ANG MAG ANG MAG ANG (dB)NE32584C
V DS = 2 V, I DS = 20 mA
Note:
1.Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
(V DS = 2 V, I DS = 20 mA)
0.100 1.001 -1.81 6.552178.030.00184.760.509-1.76-0.07838.164 0.200 1.000-3.77 6.531176.090.00386.790.507 -3.190.01133.379 0.5000.997-9.43 6.511170.330.00783.690.506-7.530.06329.6851.0000.987 -18.65 6.432161.140.01477.380.502 -14.910.13426.6222.0000.958-36.35 6.243143.490.02765.710.496 -28.840.23223.6403.0000.925-53.13 5.999126.61 0.03855.040.487-41.960.30321.983 4.0000.879-69.42 5.734110.090.04844.640.474 -54.200.39720.7725.0000.821-84.79 5.41794.240.05634.900.454 -65.250.51919.856 6.0000.757-99.35 5.121 79.850.06226.330.430 -75.310.64619.1707.0000.708 -113.22 4.89266.260.06818.600.413-84.850.72318.5708.0000.674-127.54 4.754 53.020.07410.860.401 -94.210.75418.078 9.0000.628 -141.15 4.617 39.770.078 2.800.389-102.270.82617.72310.0000.605-157.21 4.59925.650.083 -5.30 0.370 -111.190.83617.436 11.0000.549-174.62 4.50311.830.086 -14.510.330-121.080.92717.19012.0000.513165.35 4.291-2.240.087 -23.360.283-133.16 1.01716.12813.0000.504145.18 4.193-15.420.087 -32.460.248-149.27 1.05215.439 14.0000.504126.44 4.123 -29.960.088-43.350.229 -165.01 1.06115.20215.0000.517109.11 4.106-45.030.087-54.720.225179.28 1.05015.37616.0000.52791.65 4.001-60.550.086-66.360.224161.59 1.05815.20317.0000.53074.05 3.888 -75.22 0.085-79.110.208142.58 1.09814.697 18.000 0.543
57.36
3.785
-89.66
0.083
-93.10
0.212
121.91
1.114
14.536
MAG =
|S 21||S 12|
K - 1 ).2(K ±
? = S 11 S 22 - S 21 S 12
When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S 21||S 12|, K = 1 + | ? | - |S 11| - |S 22|2222 |S 12 S 21|
,0
j -j ±0?
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SCHEMATIC
Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current
amps
Parameters
Q1 Parameters
Q1VTO -0.6723RG 3VTOSC 0RD 2ALPHA 4RS 2BETA 0.115RGMET 0GAMMA 0.08KF 0GAMMADC
0.07AF 1Q 2TNOM 27DELTA 0.5XTI 3VBI 0.715EG 1.43IS 3e-13VTOTC 0N 1.22BETATCE 0RIS 0FFE
1
RID 0TAU 5e-12CDS 0.13e-12RDB 1000CBS 1e-9 CGSO 0.3e-12CGDO 0.02e-12DELTA10.3DELTA20.1FC 0.5VBR
Infinity
NE32584C NONLINEAR MODEL NE32584C
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
MODEL RANGE
Frequency:0.1 to 18 GHz Bias:V DS = 1 V to 3 V, I D = 5 mA to 30 mA Date:3/24/97
(1) Series IV Libra TOM Model
DRAIN
GA TE
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OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 84C
NE32584C
PART AVAILABILITY LEAD PACKAGE NUMBER LENGTH OUTLINE
NE32584C-S Bulk up to 1K 1.0 mm 84C NE32584C-T1
1K/Reel
1.0 mm
84C
ORDERING INFORMATION
± 0.1
)
+0.07
-0.03
When the letter is upright,the gate lead is to the right.
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