DESCRIPTION
·Collector Current -I C = 12A
·High DC Current Gain-h FE = 1000(Min)@ I C = 5A ·Complement to Type BDT64F/AF/BF/CF
APPLICATIONS
·Designed for audio output stages and general purpose amplifier applications
ABSOLUTE MAXIMUM RATINGS(T a =25℃)
SYMBOL PARAMETER VALUE
UNIT
BDT65F 60
BDT65AF 80
BDT65BF 100 V CER
Collector-Emitter Voltage
BDT65CF
120
V
BDT65F 60
BDT65AF 80
BDT65BF 100 V CEO
Collector-Emitter Voltage
BDT65CF
120 V
V EBO Emitter-Base Voltage
5 V I C Collector Current-Continuous 12 A I CM Collector Current-Peak 20 A I B
Base Current-Continuous 0.5
A
P C Collector Power Dissipation @ T C =25℃
39 W T J Junction Temperature 150 ℃ T stg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT R th j-c
Thermal Resistance, Junction to Case
5.7
℃/W
isc Website ：https://www.doczj.com/doc/eb1941837.html,
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS MIN TYP . MAX UNIT
BDT65F 60
BDT65AF
80
BDT65BF 100 V (BR)CEO
Collector-Emitter
Breakdown Voltage
BDT65CF
I C = 30mA ;I B =0
120
V
V CE(sat)-1Collector-Emitter Saturation Voltage I C = 5A; I B = 20mA
2.0 V V CE(sat)-2Collector-Emitter Saturation Voltage I C = 10A; I B = 100mA
3.0 V V BE(on )Base-Emitter On Voltage I C = 5A ; V CE = 4V 2.5 V V ECF C-E Diode Forward Voltage I F = 5A
2.0 V I CEO Collector Cutoff Current V CE = 1/2V CEOmax ; I B = 0
1 mA I CBO Collector Cutoff Current V CB = V CBOmax ;I E = 0
V CB = 1/2V CBOmax ;I E = 0;T C = 150℃
0.4
2.0
mA
I EBO Emitter Cutoff Current V EB = 5V; I C =0 5 mA h FE-1DC Current Gain I C = 1A ; V CE = 4V 1500 h FE-2DC Current Gain I C = 5A ; V CE = 4V 1000 h FE-3DC Current Gain I C = 12A ; V CE = 4V
1500
C OB
Output Capacitance
I E = 0 ; V CB = 10V; f test =1MHz
200 pF
Switching times
t on Turn-On Time
1
2.5
μs
t off
Turn-Off Time
I C = 5A; I B1= -I B2= 20mA; V CC = 30V
6 10
μs
isc Website ：https://www.doczj.com/doc/eb1941837.html,
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