127
2SC5100
I C –V CE Characteristics (Typical)
h FE –I C Characteristics (Typical)
h FE –I C Temperature Characteristics (Typical)
θj-a –t Characteristics
I C –V BE Temperature Characteristics (Typical)
V CE (sat)–I B Characteristics (Typical)
Pc –Ta Derating
Safe Operating Area (Single Pulse)
f T –I E Characteristics (Typical)
Base Current I B (A)C o l l e c t o r -E m i t t e r S a t u r a t i o n V o l t a g e V C E (s a t )(V )
Base-Emittor Voltage V BE (V)
C o l l e c t o r C u r r e n t I C (A )
Time t(ms)
T
r a n s i e n t T h e r m a l R e s i s t a n c e θj -a (?C /W
)
Ambient Temperature Ta(?C)
M a x i m u m P o w e r D i s s i p a t i o n P C (W )
Collector-Emitter Voltage V CE (V)C o l l e c t o r C u r r e n t I C (A )
Collector Current I C (A)D C C u r r e n t G a i n h F E
CE
Collector-Emitter Voltage V CE (V)C o l l e c t o r C u r r e n t I C (A )
Collector Current I C (A)
D C C u r r
e n t G a i n h F E
C u t -o f f F r e q u e n c y f T (M H Z )
Emitter Current I E (A)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)Application : Audio and General Purpose
s Absolute maximum ratings s Electrical Characteristics
s Typical Switching Characteristics (Common Emitter)
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