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6MBI 25S-120L
IGBT MODULE ( S-Series ) n Features
? NPT-Technologie ? Solderable Package ? Square SC SOA at 10 x IC ? High Short Circuit Withstand-Capability ? Small Temperature Dependence of the Turn-Off Switching Loss ? Low Losses And Soft Switching
6-Pack IGBT 1200V 6x25A
n Outline Drawing
n Applications
? High Power Switching ? A.C. Motor Controls ? D.C. Motor Controls ? Uninterruptible Power Supply
n Maximum Ratings and Characteristics
? Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current (25°C / 80°C) Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=25mA VGE=15V IC=25A VGE=0V VCE=10V f=1MHz VCC=600V IC=25A VGE=± 15V RG=51? IF=25A VGE=0V IF=25A Ratings 1200 ± 20 35 / 25 70 / 50 35 / 25 70 / 50 200 +150 -40 ～ +125 2500 3.5 Units V V A W °C °C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 ～ 3.5 Nm (M5)
? Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
Min.
Typ.
6.0 2.1 3300
Max. 1.0 200 9.0
Units mA μA V V pF
0.60 0.40 0.45 0.10
1.2 0.6 1.0 0.3 3.3 350
μs V ns
? Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.62 1.00 Units °C/W
0.05
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For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax https://www.doczj.com/doc/e05799588.html,